71V3576S150PFG8

Product Overview

Use

This product is primarily used for data storage and retrieval in electronic systems.

Characteristics

High-speed operation
Large storage capacity
Low power consumption
Compact size

Package

The 71V3576S150PFG8 is available in a small form factor package, suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

The product is typically packaged in reels or trays, with varying quantities depending on customer requirements.

Specifications

Memory Type: Static Random Access Memory (SRAM)
Organization: 256K x 18 bits
Operating Voltage: 3.3V
Access Time: 15 ns
Operating Temperature Range: -40°C to +85°C
Package Type: Fine-pitch Ball Grid Array (FBGA)

Detailed Pin Configuration

The 71V3576S150PFG8 has a total of 119 pins, each serving a specific function. The pin configuration is as follows:

VDDQ
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
VSSQ
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20
A21
A22
A23
A24
A25
A26
A27
A28
A29
A30
A31
A32
A33
A34
A35
A36
A37
A38
A39
A40
A41
A42
A43
A44
A45
A46
A47
A48
A49
A50
A51
A52
A53
A54
A55
A56
A57
A58
A59
A60
A61
A62
A63
VSSQ
VDDQ
WE#
CAS#
RAS#
OE#
UB#
LB#
CE#
ZZ#
ZZ#
ZZ#
ZZ#
ZZ#
ZZ#
ZZ#
ZZ#
ZZ#
ZZ#
ZZ#
ZZ#

Functional Features

High-speed data access and retrieval
Low power consumption during standby mode
Easy integration into electronic systems
Reliable performance in various operating conditions

Advantages and Disadvantages

Advantages

Fast operation speed
Large storage capacity
Low power consumption
Compact size

Disadvantages

Relatively higher cost compared to other memory technologies
Limited scalability beyond a certain storage capacity

Working Principles

The 71V3576S150PFG8 utilizes static random access memory (SRAM) technology. It stores digital information in a volatile manner

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 71V3576S150PFG8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of 71V3576S150PFG8 in technical solutions:

Q: What is the purpose of the 71V3576S150PFG8 in technical solutions? A: The 71V3576S150PFG8 is a high-speed, low-power CMOS SRAM that is commonly used for data storage and retrieval in various technical applications.
Q: What is the maximum operating frequency of the 71V3576S150PFG8? A: The 71V3576S150PFG8 can operate at a maximum frequency of 150 MHz.
Q: What is the capacity of the 71V3576S150PFG8? A: The 71V3576S150PFG8 has a capacity of 4 Megabits (512K x 8).
Q: What is the voltage supply range for the 71V3576S150PFG8? A: The 71V3576S150PFG8 operates with a voltage supply range of 3.0V to 3.6V.
Q: Does the 71V3576S150PFG8 support multiple power-saving modes? A: Yes, the 71V3576S150PFG8 supports various power-saving modes, including standby and deep power-down modes.
Q: Can the 71V3576S150PFG8 be used in battery-powered devices? A: Yes, the low-power characteristics of the 71V3576S150PFG8 make it suitable for use in battery-powered devices.
Q: What is the access time of the 71V3576S150PFG8? A: The access time of the 71V3576S150PFG8 is typically 10 ns.
Q: Does the 71V3576S150PFG8 have any built-in error correction capabilities? A: No, the 71V3576S150PFG8 does not have built-in error correction capabilities. External error correction techniques may be required.
Q: Can the 71V3576S150PFG8 be used in industrial temperature environments? A: Yes, the 71V3576S150PFG8 is designed to operate in industrial temperature ranges (-40°C to +85°C).
Q: What are some typical applications for the 71V3576S150PFG8? A: The 71V3576S150PFG8 can be used in various applications such as networking equipment, telecommunications systems, automotive electronics, and industrial control systems.

Please note that these answers are general and may vary depending on specific requirements and use cases.