Encyclopedia Entry: 71V35761SA200BGGI

Product Information

Category

The 71V35761SA200BGGI belongs to the category of integrated circuits (ICs).

Use

This product is primarily used in electronic devices for memory storage and retrieval purposes.

Characteristics

• Integrated circuit type: Static Random Access Memory (SRAM)
• Operating voltage: 3.3V
• Organization: 256K x 36 bits
• Package type: Ball Grid Array (BGA)
• Speed: 200 MHz
• Access time: 10 ns
• Low power consumption
• High reliability

Package and Quantity

The 71V35761SA200BGGI is packaged in a Ball Grid Array (BGA) package. It is available in a quantity of one unit per package.

Specifications

• Supply voltage: 3.3V ± 0.3V
• Operating temperature range: -40°C to +85°C
• Standby current: 10 mA (maximum)
• Operating current: 100 mA (maximum)
• Data retention: 10 years (minimum)

Pin Configuration

The detailed pin configuration of the 71V35761SA200BGGI is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. DQ16
19. DQ17
20. DQ18
21. DQ19
22. DQ20
23. DQ21
24. DQ22
25. DQ23
26. DQ24
27. DQ25
28. DQ26
29. DQ27
30. DQ28
31. DQ29
32. DQ30
33. DQ31
34. GND

Functional Features

The 71V35761SA200BGGI offers the following functional features:

• High-speed data access with a maximum operating frequency of 200 MHz
• Low power consumption, making it suitable for battery-powered devices
• Reliable data retention for a minimum of 10 years
• Wide operating temperature range (-40°C to +85°C)
• Easy integration into electronic systems due to its compact BGA package

Advantages and Disadvantages

Advantages

• High-speed operation allows for efficient data processing
• Low power consumption extends battery life in portable devices
• Reliable data retention ensures data integrity over extended periods
• Wide operating temperature range enables usage in various environments
• Compact BGA package facilitates easy integration into electronic systems

Disadvantages

• Limited storage capacity (256K x 36 bits) compared to other memory technologies
• Higher cost per bit compared to alternative memory solutions

Working Principles

The 71V35761SA200BGGI is based on Static Random Access Memory (SRAM) technology. It stores data using flip-flops, which retain information as long as power is supplied. The memory cells are organized in a 256K x 36-bit configuration, allowing for fast and random access to stored data.

Application Field Plans

The 71V35761SA200BGGI finds applications in various fields, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics

Alternative Models

Alternative models that offer similar functionality to the 71V35761SA200BGGI include: - 71V3556S100BG - 71V35761S200BQG - 71V35761S200BGI - 71V35761S200BQI

These alternative models provide comparable specifications and features, allowing users to choose the most suitable option for their specific requirements.

In conclusion, the 71V35761SA200BGGI is a high-speed, low-power Static Random Access Memory (SRAM) integrated circuit. It offers reliable data storage and retrieval capabilities, making it suitable for various electronic applications. While it has certain limitations in terms of storage capacity and cost, its advantages outweigh these disadvantages, making it a valuable component in modern electronic systems.