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71V25761S200PFG8

Encyclopedia Entry: 71V25761S200PFG8

Product Information Overview

Category: Integrated Circuit (IC)

Use: The 71V25761S200PFG8 is a high-speed, low-power, 256K x 36 synchronous dual-port static random access memory (SDRAM) IC. It is designed for use in various applications that require fast and reliable data storage and retrieval.

Characteristics: - High-speed operation - Low power consumption - Dual-port architecture for simultaneous read and write operations - Synchronous interface for easy integration with other components - Large storage capacity of 256K x 36 bits

Package: The 71V25761S200PFG8 is available in a compact and industry-standard 208-pin plastic quad flat pack (PQFP) package.

Essence: This IC serves as a crucial component in electronic devices that require efficient and reliable data storage capabilities. Its high-speed operation and large storage capacity make it suitable for applications demanding quick access to a significant amount of data.

Packaging/Quantity: Each package contains one 71V25761S200PFG8 IC.

Specifications

  • Organization: 256K x 36 bits
  • Supply Voltage: 3.3V
  • Access Time: 6 ns
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: PQFP
  • Pin Count: 208

Detailed Pin Configuration

The 71V25761S200PFG8 IC has a total of 208 pins. The detailed pin configuration can be found in the product datasheet provided by the manufacturer.

Functional Features

  • Dual-port architecture allows simultaneous read and write operations.
  • Synchronous interface ensures easy integration with other components.
  • High-speed operation enables fast data access.
  • Low power consumption for energy-efficient operation.

Advantages and Disadvantages

Advantages: - High-speed operation allows for quick data access. - Dual-port architecture enables simultaneous read and write operations. - Synchronous interface simplifies integration with other components. - Low power consumption for energy efficiency.

Disadvantages: - Limited storage capacity compared to higher-capacity memory devices. - Relatively high cost compared to lower-capacity memory options.

Working Principles

The 71V25761S200PFG8 operates based on synchronous dynamic random access memory (SDRAM) technology. It uses a dual-port architecture, allowing for simultaneous read and write operations. The synchronous interface ensures proper synchronization with the system clock, enabling efficient data transfer. The IC utilizes low-power circuitry to minimize energy consumption while maintaining high-speed operation.

Detailed Application Field Plans

The 71V25761S200PFG8 is suitable for various applications that require fast and reliable data storage and retrieval. Some potential application fields include: 1. Networking equipment 2. Telecommunications systems 3. Industrial automation 4. Medical devices 5. Automotive electronics

Detailed and Complete Alternative Models

  1. 71V25761S200BQG8 - Similar specifications but available in a different package type (BQFP).
  2. 71V25761S200BG8 - Lower power consumption variant with similar specifications.
  3. 71V25761S200PFI8 - Improved temperature range (-40°C to +105°C) variant with similar specifications.

These alternative models offer similar functionality and can be considered as alternatives to the 71V25761S200PFG8 depending on specific requirements.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 71V25761S200PFG8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of 71V25761S200PFG8 in technical solutions:

  1. Question: What is the purpose of the 71V25761S200PFG8 in technical solutions?
    Answer: The 71V25761S200PFG8 is a high-speed, low-power CMOS SRAM that is commonly used for data storage and retrieval in various technical solutions.

  2. Question: What is the capacity of the 71V25761S200PFG8?
    Answer: The 71V25761S200PFG8 has a capacity of 256 megabits (32 megabytes).

  3. Question: What is the operating voltage range for this SRAM?
    Answer: The 71V25761S200PFG8 operates within a voltage range of 2.7V to 3.6V.

  4. Question: Can this SRAM be used in battery-powered devices?
    Answer: Yes, the 71V25761S200PFG8 is designed to operate at low power, making it suitable for battery-powered devices.

  5. Question: What is the access time of this SRAM?
    Answer: The 71V25761S200PFG8 has an access time of 10 ns, allowing for fast data retrieval.

  6. Question: Does this SRAM support multiple read and write operations simultaneously?
    Answer: Yes, the 71V25761S200PFG8 supports simultaneous read and write operations, enabling efficient data processing.

  7. Question: Can this SRAM be used in industrial applications with harsh environments?
    Answer: Yes, the 71V25761S200PFG8 is designed to withstand industrial temperature ranges and is suitable for harsh environments.

  8. Question: Does this SRAM have any built-in error correction capabilities?
    Answer: No, the 71V25761S200PFG8 does not have built-in error correction capabilities. Additional error correction mechanisms may be required.

  9. Question: What is the package type of the 71V25761S200PFG8?
    Answer: The 71V25761S200PFG8 comes in a 100-pin TQFP (Thin Quad Flat Package) for easy integration into circuit boards.

  10. Question: Can this SRAM be used in high-speed data processing applications?
    Answer: Yes, the 71V25761S200PFG8 is designed for high-speed operation and can be used in various high-speed data processing applications.

Please note that these answers are general and may vary depending on specific application requirements.