Encyclopedia Entry: 71V25761S200BG

Product Information Overview

Category: Integrated Circuit (IC)

Use: The 71V25761S200BG is a high-speed, low-power CMOS static random access memory (SRAM) IC. It is designed for use in various electronic devices and systems that require fast and reliable data storage and retrieval.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Reliable data retention - Easy integration into electronic circuits

Package: The 71V25761S200BG is available in a compact and durable BGA (Ball Grid Array) package, which ensures efficient heat dissipation and provides mechanical protection to the integrated circuit.

Essence: This IC is an essential component in modern electronic devices, enabling them to store and retrieve data quickly and efficiently.

Packaging/Quantity: The 71V25761S200BG is typically sold in reels or trays containing multiple units. The exact quantity may vary depending on the supplier and customer requirements.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 256K x 16 bits
• Operating Voltage: 2.5V
• Access Time: 10 ns
• Standby Current: 10 μA (typical)
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA
• Pin Count: 200

Detailed Pin Configuration

The 71V25761S200BG features a total of 200 pins, each serving a specific function within the integrated circuit. The pin configuration is as follows:

(Please refer to the datasheet or technical documentation for the detailed pin configuration diagram.)

Functional Features

1. High-Speed Operation: The 71V25761S200BG offers fast access times, allowing for quick data retrieval and processing.
2. Low Power Consumption: This IC is designed to minimize power consumption, making it suitable for battery-powered devices and energy-efficient systems.
3. Large Storage Capacity: With a capacity of 256K x 16 bits, the IC provides ample space for storing data.
4. Reliable Data Retention: The SRAM technology used in this IC ensures reliable data retention even during power interruptions or fluctuations.
5. Easy Integration: The compact BGA package and standardized pin configuration facilitate easy integration into various electronic circuits.

Advantages and Disadvantages

Advantages: - High-speed operation enables efficient data processing. - Low power consumption prolongs battery life in portable devices. - Large storage capacity accommodates extensive data requirements. - Reliable data retention ensures data integrity. - Easy integration simplifies circuit design and assembly.

Disadvantages: - Limited storage capacity compared to other memory technologies like NAND flash or hard drives. - Volatile memory requires continuous power supply to retain data.

Working Principles

The 71V25761S200BG operates based on static random access memory (SRAM) technology. It utilizes flip-flops to store each bit of data as long as power is supplied. When an address is provided, the IC retrieves the corresponding data from the memory array and outputs it for further processing.

Detailed Application Field Plans

The 71V25761S200BG finds applications in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Consumer electronics - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. 71V25761S200BGI8: Similar to 71V25761S200BG, but with an extended operating temperature range (-40°C to +125°C).
2. 71V25761S200BGI10: Similar to 71V25761S200BG, but with a faster access time of 10 ns.

(Note: The list above provides only a few alternative models. Please refer to the manufacturer's documentation for a comprehensive list of alternative models.)

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