Encyclopedia Entry: 71V256SA12YGI8

Product Information Overview

Category: Integrated Circuit (IC)

Use: The 71V256SA12YGI8 is a high-speed, low-power CMOS static random access memory (SRAM) IC. It is designed for use in various electronic devices and systems that require fast and reliable data storage.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity (256 kilobits) - Non-volatile data retention - Easy integration into existing circuitry

Package: The 71V256SA12YGI8 is available in a compact yet durable plastic package, which ensures protection against external elements and facilitates easy installation on printed circuit boards (PCBs).

Essence: This IC serves as a crucial component in electronic devices by providing temporary data storage capabilities. It allows for quick read and write operations, making it suitable for applications that require rapid data access.

Packaging/Quantity: The 71V256SA12YGI8 is typically sold in reels or trays, with each reel containing a specific quantity of ICs. The exact packaging and quantity may vary depending on the manufacturer and supplier.

Specifications

• Organization: 32K x 8 bits
• Supply Voltage: 3.3V
• Access Time: 12 ns
• Standby Current: 10 µA (typical)
• Operating Temperature Range: -40°C to +85°C
• Package Type: 28-pin Small Outline Integrated Circuit (SOIC)

Detailed Pin Configuration

The 71V256SA12YGI8 features a 28-pin SOIC package with the following pin configuration:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A14)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Power Supply (VCC)
7. Ground (GND)

Functional Features

• High-speed operation allows for quick data access and transfer.
• Low power consumption ensures efficient energy usage in portable devices.
• Non-volatile data retention ensures that stored information is preserved even when power is disconnected.
• Easy integration into existing circuitry simplifies the design process for electronic systems.

Advantages and Disadvantages

Advantages: - Fast operation speed enables efficient data processing. - Low power consumption prolongs battery life in portable devices. - Non-volatile data retention ensures data integrity during power cycles. - Easy integration reduces design complexity and time-to-market.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Relatively higher cost per bit compared to alternative memory solutions. - Susceptible to electromagnetic interference (EMI) due to its high-speed operation.

Working Principles

The 71V256SA12YGI8 operates based on the principles of static random access memory (SRAM). It utilizes flip-flops to store and retrieve data, allowing for fast read and write operations. The IC requires a stable power supply and appropriate control signals to function correctly.

Detailed Application Field Plans

The 71V256SA12YGI8 finds applications in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Consumer electronics - Industrial automation systems

Its high-speed operation and low power consumption make it suitable for applications that require rapid data access and energy efficiency.

Detailed and Complete Alternative Models

• 71V256SA10YGI8: Similar to the 71V256SA12YGI8, but with a faster access time of 10 ns.
• 71V512SA12YGI8: Doubles the storage capacity to 512 kilobits while maintaining similar characteristics.
• 71V128SA12YGI8: Halves the storage capacity to 128 kilobits while offering a lower-cost alternative.

These alternative models provide flexibility in terms of access time, storage capacity, and cost, allowing designers to choose the most suitable option for their specific requirements.

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