71V2556SA100BGI8

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory Controller
• Characteristics: High-speed, Low-power, Versatile
• Package: BGA (Ball Grid Array)
• Essence: Efficient memory management and control
• Packaging/Quantity: Individual units in anti-static packaging

Specifications

• Manufacturer: XYZ Corporation
• Part Number: 71V2556SA100BGI8
• Technology: CMOS (Complementary Metal-Oxide-Semiconductor)
• Memory Type: Synchronous SRAM (Static Random Access Memory)
• Memory Size: 256K x 36 bits
• Operating Voltage: 3.3V
• Speed: 100 MHz
• Access Time: 10 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The 71V2556SA100BGI8 IC has a total of 119 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VDD | Power Supply Voltage | | 2 | VSS | Ground | | 3-38 | A0-A35 | Address Inputs | | 39 | CE | Chip Enable | | 40 | OE | Output Enable | | 41 | WE | Write Enable | | 42-77 | DQ0-DQ35 | Data Inputs/Outputs | | 78-81 | DM0-DM3 | Data Mask Inputs | | 82 | CLK | Clock Input | | 83 | CKE | Clock Enable | | 84 | CS0 | Chip Select 0 | | 85 | CS1 | Chip Select 1 | | 86 | CS2 | Chip Select 2 | | 87 | CS3 | Chip Select 3 | | 88-91 | BA0-BA3 | Bank Address Inputs | | 92 | RAS | Row Address Strobe | | 93 | CAS | Column Address Strobe | | 94 | WEN | Write Enable (for Burst Mode) | | 95 | ODT | Output Data Strobe | | 96-119 | NC | No Connection |

Functional Features

• Efficient memory management and control
• High-speed operation at 100 MHz
• Low-power consumption
• Synchronous interface for easy integration with other components
• Versatile chip select options for flexible memory organization
• Automatic power-down mode for reduced power consumption during idle periods

Advantages

• Fast access time of 10 ns allows for quick data retrieval
• Low-power design extends battery life in portable devices
• Versatility in memory organization enables efficient data storage and retrieval
• Reliable performance in extreme temperature conditions (-40°C to +85°C)
• Easy integration with existing systems due to parallel interface

Disadvantages

• Limited memory size of 256K x 36 bits may not be sufficient for certain applications requiring larger memory capacity
• BGA package may require specialized equipment for soldering and rework

Working Principles

The 71V2556SA100BGI8 is a memory controller IC designed to efficiently manage and control synchronous SRAM. It operates by receiving address inputs, control signals, and data inputs/outputs from the host system. The IC uses these inputs to perform various memory operations such as read, write, and refresh.

The clock input synchronizes the internal operations of the IC, ensuring proper timing for data transfers. The chip select signals (CS0-CS3) allow for flexible memory organization by enabling or disabling specific memory banks. The row address strobe (RAS) and column address strobe (CAS) signals control the selection of specific memory locations.

The IC also features a write enable signal (WE) and an output enable signal (OE) to control the read and write operations. Additionally, data mask inputs (DM0-DM3) and an output data strobe (ODT) signal provide further control over data transfers.

Detailed Application Field Plans

The 71V2556SA100BGI8 is widely used in various applications that require efficient memory management and control. Some of the potential application fields include: 1. Networking equipment: Routers, switches, and network interface cards often utilize memory controllers to manage data buffers and cache. 2. Telecommunications systems: Voice and data communication devices rely on memory controllers for storing and retrieving call-related information. 3. Industrial automation: Control systems and programmable logic controllers (PLCs) use memory controllers to store program instructions and data. 4. Automotive electronics: Advanced driver assistance systems (ADAS