Encyclopedia Entry: 71V016SA12BFI

Product Overview

Category

The 71V016SA12BFI belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Reliable performance

Package

The 71V016SA12BFI is available in a compact package, suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

The 71V016SA12BFI is typically packaged individually and is available in varying quantities depending on customer requirements.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 16 Megabits (2 Megabytes)
• Organization: 2M x 8-bit
• Supply Voltage: 3.3V
• Access Time: 12 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Package Type: Fine-pitch Ball Grid Array (FBGA)

Detailed Pin Configuration

The 71V016SA12BFI has a total of 48 pins, which are assigned specific functions as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A20 - Address inputs
4. DQ0-DQ7 - Data inputs/outputs
5. CE - Chip enable
6. OE - Output enable
7. WE - Write enable
8. UB/LB - Upper byte/lower byte control
9. CLK - Clock input
10. NC - No connection

(Note: The pin configuration may vary depending on the manufacturer's specifications.)

Functional Features

• Fast access time allows for quick data retrieval.
• Low power consumption ensures energy efficiency.
• Reliable performance guarantees data integrity.
• Easy integration into various electronic systems.

Advantages and Disadvantages

Advantages

• High-speed operation enables efficient data processing.
• Large storage capacity accommodates extensive data requirements.
• Low power consumption prolongs battery life in portable devices.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited scalability beyond the specified capacity.
• Susceptible to data loss in case of power failure without backup measures.

Working Principles

The 71V016SA12BFI utilizes static random access memory (SRAM) technology. It stores data using flip-flop circuits, which retain information as long as power is supplied. The address inputs specify the location where data is stored or retrieved, while the control signals (CE, OE, WE) govern the read and write operations. The clock input synchronizes these operations, ensuring proper timing.

Detailed Application Field Plans

The 71V016SA12BFI finds applications in various electronic systems, including but not limited to: - Computer motherboards - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. 71V016SA10BFI: Similar to the 71V016SA12BFI, but with a faster access time of 10 nanoseconds.
2. 71V032SA12BFI: Double the capacity of the 71V016SA12BFI, offering 32 Megabits (4 Megabytes) of storage.
3. 71V008SA12BFI: Half the capacity of the 71V016SA12BFI, providing 8 Megabits (1 Megabyte) of storage.

(Note: The alternative models listed above are for illustrative purposes and may not represent the complete range of available options.)

In conclusion, the 71V016SA12BFI is a high-speed, large-capacity SRAM memory device suitable for various electronic applications. Its reliable performance, low power consumption, and compact package make it an ideal choice for data storage and retrieval in modern electronic systems.

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