6116SA35TDB

Product Overview

Category

The 6116SA35TDB belongs to the category of semiconductor memory devices.

Use

It is primarily used for storing digital information in electronic systems.

Characteristics

• Non-volatile: Retains stored data even when power is turned off.
• High-speed operation: Allows for quick access and retrieval of data.
• Compact size: Occupies minimal space within electronic circuits.
• Low power consumption: Operates efficiently with minimal energy usage.

Package

The 6116SA35TDB is available in a standard dual in-line package (DIP).

Essence

This product serves as a reliable and efficient storage solution for electronic devices, ensuring data integrity and accessibility.

Packaging/Quantity

The 6116SA35TDB is typically packaged in reels or tubes, with each containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory capacity: 2 kilobits (256 x 8 bits)
• Operating voltage: 5V
• Access time: 35 nanoseconds
• Operating temperature range: -40°C to +85°C
• Data retention: Minimum 10 years

Detailed Pin Configuration

The 6116SA35TDB features a standard pin configuration with the following connections:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A7)
5. Data Inputs/Outputs (D0-D7)
6. Vcc (Power supply)
7. Ground (GND)

Functional Features

• Chip Enable (CE): Activates the memory chip when set to a logical low state.
• Output Enable (OE): Enables the output buffers when set to a logical low state.
• Write Enable (WE): Allows data to be written into the memory when set to a logical low state.
• Address Inputs (A0-A7): Selects the specific memory location for read or write operations.
• Data Inputs/Outputs (D0-D7): Transfers data between the memory and the external system.
• Vcc: Supplies power to the memory chip.
• Ground (GND): Provides the reference voltage for the chip.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High-speed operation allows for quick access to stored information.
• Compact size enables integration into various electronic systems.
• Low power consumption minimizes energy usage.

Disadvantages

• Limited memory capacity compared to more advanced storage technologies.
• Relatively slower access time compared to modern memory devices.

Working Principles

The 6116SA35TDB utilizes a combination of electronic circuits and semiconductor technology to store and retrieve digital information. It employs a matrix of memory cells, with each cell capable of storing one bit of data. The memory cells are organized in rows and columns, and data is accessed by specifying the desired row and column addresses.

Detailed Application Field Plans

The 6116SA35TDB finds applications in various electronic systems, including but not limited to: - Microcontrollers - Embedded systems - Industrial automation - Communication devices - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the 6116SA35TDB include: - 6116SA25TDB - 6116SA45TDB - 6116SA55TDB - 6116SA65TDB

These models may differ in terms of specifications, such as memory capacity, access time, and operating temperature range. It is important to select the appropriate model based on the specific requirements of the application.

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