6116LA55TDB

Product Overview

Category

The 6116LA55TDB belongs to the category of integrated circuits (ICs).

Use

This IC is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

• The 6116LA55TDB is a high-speed static random access memory (SRAM) chip.
• It has a capacity of 16 kilobits (2 kilobytes).
• The IC operates at a voltage range of 4.5V to 5.5V.
• It offers fast access times, typically around 55 nanoseconds.
• The chip is designed to be compatible with various microprocessors and digital systems.

Package

The 6116LA55TDB is available in a standard dual in-line package (DIP). The package dimensions are 0.6 x 0.3 inches.

Essence

The essence of the 6116LA55TDB lies in its ability to provide reliable and efficient data storage and retrieval functions in electronic devices.

Packaging/Quantity

The IC is typically packaged in tubes or trays, with each containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Capacity: 16 kilobits (2 kilobytes)
• Operating Voltage Range: 4.5V to 5.5V
• Access Time: 55 nanoseconds
• Compatibility: Compatible with various microprocessors and digital systems

Detailed Pin Configuration

The 6116LA55TDB has a total of 24 pins. The pin configuration is as follows:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A10)
5. Data Inputs/Outputs (D0-D7)
6. Vcc (Power Supply)
7. Ground (GND)

Functional Features

• The chip supports both read and write operations.
• It offers a high-speed access time, allowing for efficient data retrieval.
• The IC has built-in control pins for enabling or disabling specific functions.
• It operates at a wide voltage range, providing flexibility in various electronic systems.

Advantages and Disadvantages

Advantages

• Fast access times enable quick data retrieval.
• Compatibility with different microprocessors and digital systems enhances versatility.
• Reliable performance ensures efficient memory storage and retrieval.

Disadvantages

• Limited capacity compared to higher-capacity memory chips.
• Higher power consumption compared to low-power memory alternatives.

Working Principles

The 6116LA55TDB utilizes static random access memory technology to store and retrieve data. It consists of multiple memory cells arranged in a grid-like structure. Each cell can store a single bit of information. The chip's control pins allow for the selection of specific memory locations and enable read or write operations.

Detailed Application Field Plans

The 6116LA55TDB is widely used in various electronic devices and systems, including but not limited to: - Personal computers - Printers - Communication equipment - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the 6116LA55TDB include: - 6116LA55TDG - 6116LA55TDM - 6116LA55TDP - 6116LA55TDR

These alternative models may have slight variations in specifications or package types, but they serve the same purpose of providing high-speed SRAM capabilities.

In conclusion, the 6116LA55TDB is a 16 kilobit static random access memory chip commonly used in electronic devices. Its fast access times, compatibility with various systems, and reliable performance make it a popular choice for memory storage and retrieval applications.