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ZXMN10A25K
Product Overview
Category
The ZXMN10A25K belongs to the category of power MOSFETs.
Use
It is used for switching and amplifying electronic signals in various applications.
Characteristics
- High voltage capability
- Low input capacitance
- Fast switching speed
- Low on-resistance
Package
The ZXMN10A25K is typically available in a TO-252 package.
Essence
This MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on supplier and customer requirements.
Specifications
- Drain-Source Voltage (VDS): 100V
- Continuous Drain Current (ID): 10A
- On-Resistance (RDS(on)): 0.1Ω
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 15nC
- Operating Temperature: -55°C to 150°C
Detailed Pin Configuration
The ZXMN10A25K typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low input capacitance enables fast switching speeds.
- Low on-resistance minimizes power losses and improves efficiency.
Advantages and Disadvantages
Advantages
- High voltage capability suitable for diverse applications
- Fast switching speed for improved performance
- Low on-resistance for enhanced efficiency
Disadvantages
- Sensitivity to static electricity
- Potential for thermal issues at high currents
Working Principles
The ZXMN10A25K operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.
Detailed Application Field Plans
The ZXMN10A25K is widely used in: - Switching power supplies - Motor control - LED lighting - Audio amplifiers - DC-DC converters
Detailed and Complete Alternative Models
Some alternative models to the ZXMN10A25K include: - IRF540N - FQP30N06L - STP55NF06L - IRLB8748
In conclusion, the ZXMN10A25K power MOSFET offers high voltage capability, fast switching speed, and low on-resistance, making it suitable for a wide range of power management and control applications.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací ZXMN10A25K v technických řešeních
What is ZXMN10A25K?
- ZXMN10A25K is a N-channel enhancement mode MOSFET designed for use in various technical solutions.
What are the key specifications of ZXMN10A25K?
- The key specifications of ZXMN10A25K include a drain-source voltage (VDS) of 100V, continuous drain current (ID) of 9.8A, and low on-resistance.
In what applications can ZXMN10A25K be used?
- ZXMN10A25K can be used in applications such as power supplies, motor control, LED lighting, and other general switching circuits.
What is the typical on-resistance of ZXMN10A25K?
- The typical on-resistance of ZXMN10A25K is around 0.085 ohms.
What is the maximum junction temperature of ZXMN10A25K?
- The maximum junction temperature of ZXMN10A25K is 175°C.
Does ZXMN10A25K require a heat sink in high-power applications?
- Yes, in high-power applications, it is recommended to use a heat sink to dissipate heat effectively.
Can ZXMN10A25K be used for PWM (Pulse Width Modulation) applications?
- Yes, ZXMN10A25K is suitable for PWM applications due to its fast switching characteristics.
What is the gate-source voltage (VGS) range for ZXMN10A25K?
- The gate-source voltage (VGS) range for ZXMN10A25K is typically between ±20V.
Is ZXMN10A25K suitable for automotive applications?
- Yes, ZXMN10A25K is designed to meet the requirements for automotive applications, including AEC-Q101 qualification.
Where can I find the detailed datasheet for ZXMN10A25K?
- The detailed datasheet for ZXMN10A25K can be found on the manufacturer's official website or through authorized distributors.