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MMBF170-7-F

MMBF170-7-F

Introduction

The MMBF170-7-F is a field-effect transistor (FET) belonging to the category of electronic components. This device is commonly used in various electronic circuits and applications due to its unique characteristics and functional features.

Basic Information Overview

  • Category: Field-Effect Transistor (FET)
  • Use: Amplification, switching, and signal processing in electronic circuits
  • Characteristics: Low power consumption, high input impedance, and fast response time
  • Package: SOT-23
  • Essence: Small-signal amplification and signal switching
  • Packaging/Quantity: Typically available in reels of 3000 units

Specifications

  • Drain-Source Voltage (VDS): 25V
  • Gate-Source Voltage (VGS): ±8V
  • Continuous Drain Current (ID): 0.01A
  • Total Power Dissipation (PD): 225mW
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The MMBF170-7-F has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • High input impedance allows for minimal loading of preceding stages
  • Fast switching speed enables rapid signal processing
  • Low power consumption makes it suitable for battery-operated devices

Advantages and Disadvantages

Advantages

  • Small package size for space-constrained designs
  • Low input capacitance minimizes signal distortion
  • Compatible with automated assembly processes

Disadvantages

  • Limited maximum current handling capability
  • Susceptible to damage from electrostatic discharge (ESD)

Working Principles

The MMBF170-7-F operates based on the modulation of the conductivity of a semiconductor channel by the electric field applied at the gate terminal. When a voltage is applied between the gate and source terminals, the FET controls the flow of current between the drain and source terminals, effectively acting as a switch or amplifier.

Detailed Application Field Plans

The MMBF170-7-F finds extensive use in the following applications: - Audio amplifiers - Signal processing circuits - Low-power switching circuits - Sensor interfaces - Oscillator circuits

Detailed and Complete Alternative Models

Some alternative models to the MMBF170-7-F include: - 2N7002 - BS170 - DMN2004K

In conclusion, the MMBF170-7-F is a versatile field-effect transistor with a wide range of applications in electronic circuits, offering unique advantages such as low power consumption and high input impedance. However, it is important to consider its limitations, such as its susceptibility to ESD and limited current handling capability, when selecting it for specific designs.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MMBF170-7-F v technických řešeních

  1. What is MMBF170-7-F?

    • MMBF170-7-F is a JFET transistor designed for low power applications.
  2. What are the key features of MMBF170-7-F?

    • The key features include low on-state resistance, high forward transfer admittance, and low leakage current.
  3. What are the typical applications of MMBF170-7-F?

    • Typical applications include signal amplification, switching circuits, and voltage-controlled resistors.
  4. What is the maximum drain-source voltage for MMBF170-7-F?

    • The maximum drain-source voltage is 40V.
  5. What is the maximum gate-source voltage for MMBF170-7-F?

    • The maximum gate-source voltage is ±20V.
  6. What is the operating temperature range for MMBF170-7-F?

    • The operating temperature range is -55°C to +150°C.
  7. What is the typical input capacitance of MMBF170-7-F?

    • The typical input capacitance is 8pF.
  8. What is the maximum drain current for MMBF170-7-F?

    • The maximum drain current is 50mA.
  9. What is the package type for MMBF170-7-F?

    • The package type is SOT-23.
  10. Where can I find the detailed datasheet for MMBF170-7-F?

    • The detailed datasheet can be found on the manufacturer's website or through authorized distributors.