DMN90H2D2HCTI

Product Overview

Category: Semiconductor
Use: Power management
Characteristics: High efficiency, low power consumption
Package: TO-252-3
Essence: MOSFET
Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

Voltage - Drain-Source Breakdown (V(BR)DSS): 900V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) @ Vds: 1100pF @ 25V
Power Dissipation (Max): 88W

Detailed Pin Configuration

Pin 1: Gate
Pin 2: Drain
Pin 3: Source

Functional Features

High voltage capability
Low gate charge
Fast switching speed
Low on-resistance

Advantages and Disadvantages

Advantages

High efficiency
Low power consumption
Fast switching speed

Disadvantages

Sensitive to static electricity
Requires careful handling during installation

Working Principles

The DMN90H2D2HCTI is a MOSFET designed for power management applications. It operates by controlling the flow of current between the drain and source terminals based on the voltage applied to the gate terminal.

Detailed Application Field Plans

The DMN90H2D2HCTI is suitable for a wide range of power management applications, including: - Switching power supplies - Motor control - LED lighting - Solar inverters - Battery management systems

Detailed and Complete Alternative Models

DMN60H2D2HCTI
DMN120H2D2HCTI
DMN150H2D2HCTI

This completes the entry for DMN90H2D2HCTI, providing comprehensive information about its product category, basic overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.