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DMN3025LFDF-7

DMN3025LFDF-7

Product Overview

Category

The DMN3025LFDF-7 belongs to the category of power MOSFETs.

Use

It is used as a high-voltage, low on-resistance, and fast switching N-channel enhancement-mode power MOSFET.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed

Package

The DMN3025LFDF-7 is typically available in a TO-252 package.

Essence

This product is essential for power management applications where efficient switching and low power dissipation are crucial.

Packaging/Quantity

It is usually packaged in reels with a quantity of 2500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 250V
  • Continuous Drain Current (ID): 3.6A
  • On-Resistance (RDS(on)): 1.2 Ohms
  • Power Dissipation (PD): 2.5W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The DMN3025LFDF-7 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid control of power flow.

Advantages

  • Suitable for high-voltage applications
  • Low power dissipation
  • Efficient power management

Disadvantages

  • Limited continuous drain current compared to some alternative models
  • Relatively higher on-resistance

Working Principles

The DMN3025LFDF-7 operates based on the principles of field-effect transistors, utilizing the electric field at the gate to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The DMN3025LFDF-7 is commonly used in: - Switching power supplies - DC-DC converters - Motor control systems - LED lighting applications

Detailed and Complete Alternative Models

Some alternative models to the DMN3025LFDF-7 include: - IRF540N - FQP30N06L - STP55NF06L

In summary, the DMN3025LFDF-7 is a high-voltage power MOSFET with low on-resistance and fast switching speed, making it suitable for various power management applications. While it has advantages such as high voltage capability and low power dissipation, it also has limitations in terms of continuous drain current and on-resistance when compared to alternative models. Its working principle is based on field-effect transistors, and it finds application in switching power supplies, DC-DC converters, motor control systems, and LED lighting applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací DMN3025LFDF-7 v technických řešeních

  1. What is the maximum drain-source voltage of DMN3025LFDF-7?

    • The maximum drain-source voltage of DMN3025LFDF-7 is 250V.
  2. What is the continuous drain current of DMN3025LFDF-7?

    • The continuous drain current of DMN3025LFDF-7 is 12A.
  3. What is the on-resistance of DMN3025LFDF-7?

    • The on-resistance of DMN3025LFDF-7 is typically 0.065 ohms.
  4. What is the gate threshold voltage of DMN3025LFDF-7?

    • The gate threshold voltage of DMN3025LFDF-7 is typically 2.5V.
  5. What are the typical applications for DMN3025LFDF-7?

    • DMN3025LFDF-7 is commonly used in power management, motor control, and other high-current switching applications.
  6. Is DMN3025LFDF-7 suitable for use in automotive applications?

    • Yes, DMN3025LFDF-7 is designed to meet the requirements for automotive applications.
  7. What is the operating temperature range of DMN3025LFDF-7?

    • The operating temperature range of DMN3025LFDF-7 is -55°C to 150°C.
  8. Does DMN3025LFDF-7 have built-in protection features?

    • Yes, DMN3025LFDF-7 has built-in overcurrent protection and thermal shutdown features.
  9. Can DMN3025LFDF-7 be used in high-frequency switching applications?

    • Yes, DMN3025LFDF-7 is suitable for high-frequency switching due to its low on-resistance and fast switching characteristics.
  10. What package type is DMN3025LFDF-7 available in?

    • DMN3025LFDF-7 is available in a DPAK (TO-252) package for easy mounting and heat dissipation.