STK11C88-SF45I

Introduction

The STK11C88-SF45I is a non-volatile static RAM (NVSRAM) that belongs to the category of semiconductor memory devices. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Semiconductor Memory Device
• Use: Non-volatile Static RAM
• Characteristics: Retains data without power, high-speed read and write operations
• Package: DIP (Dual Inline Package)
• Essence: Combines the benefits of both SRAM and EEPROM
• Packaging/Quantity: Available in various packaging options, typically sold in reels or tubes

Specifications

• Capacity: 32Kbit
• Operating Voltage: 4.5V
• Access Time: 45ns
• Data Retention: 10 years
• Operating Temperature: -40°C to 85°C
• Interface: Parallel

Detailed Pin Configuration

The STK11C88-SF45I has a standard DIP package with 28 pins. The detailed pin configuration is as follows: 1. A0-A14: Address Inputs 2. CE1, CE2: Chip Enable Inputs 3. OE: Output Enable Input 4. WE: Write Enable Input 5. VCC: Power Supply 6. VSS: Ground 7. DQ0-DQ7: Data Input/Output

Functional Features

• Non-volatile data storage
• High-speed access
• Low power consumption
• Easy interfacing with microcontrollers and other digital systems

Advantages and Disadvantages

Advantages

• Retains data without power
• Fast read and write operations
• Compatible with existing SRAM interfaces

Disadvantages

• Limited capacity compared to traditional SRAM
• Higher cost compared to volatile SRAM

Working Principles

The STK11C88-SF45I utilizes a combination of volatile SRAM cells and non-volatile EEPROM cells to achieve non-volatile data storage. When data is written to the device, it is stored in the SRAM cells and simultaneously copied to the EEPROM cells. During power loss, the data is retained in the EEPROM cells, ensuring non-volatility.

Detailed Application Field Plans

The STK11C88-SF45I is suitable for applications requiring fast read and write operations along with non-volatile data storage. Some potential application fields include: - Industrial control systems - Automotive electronics - Medical devices - Data logging and event recording

Detailed and Complete Alternative Models

Some alternative models to the STK11C88-SF45I include: - STK12C68-SF45I: Similar NVSRAM with higher capacity - FM1608B: Parallel non-volatile SRAM with lower power consumption - CY14B101I: Serial NVSRAM with smaller form factor

In conclusion, the STK11C88-SF45I offers a unique combination of non-volatile data storage and high-speed operation, making it suitable for various embedded system applications.

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