S99FL164K0XMFI011

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Low power consumption
  • Compact package size
• Package: Surface Mount Technology (SMT)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Available in reels, quantity varies based on customer requirements

Specifications

• Memory Type: NOR Flash
• Density: 16 Megabits (2 Megabytes)
• Organization: 2M x 8 bits
• Voltage Range: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Serial Peripheral Interface (SPI)
• Erase/Program Time: 35ms (typical)
• Data Retention: 20 years (typical)

Detailed Pin Configuration

The S99FL164K0XMFI011 has the following pin configuration:

| Pin Name | Description | |----------|-------------| | VCC | Power Supply | | GND | Ground | | HOLD | Suspends ongoing operation | | WP | Write Protect | | SCK | Serial Clock | | SI | Serial Input | | SO | Serial Output | | CS# | Chip Select |

Functional Features

• High-speed read and write operations enable fast data access.
• Efficient erase and program times enhance overall performance.
• Advanced security features protect sensitive data.
• Flexible architecture allows for easy integration into various systems.
• Wide voltage range ensures compatibility with different power supplies.

Advantages

• Reliable and durable flash memory technology.
• Low power consumption extends battery life in portable devices.
• Compact package size saves valuable board space.
• Easy-to-use interface simplifies integration into existing designs.
• High-speed operations improve system performance.

Disadvantages

• Limited storage capacity compared to other flash memory types.
• Higher cost per bit compared to larger capacity flash memories.
• Erase and program times may be slower compared to some alternatives.
• Limited compatibility with certain legacy systems.

Working Principles

The S99FL164K0XMFI011 operates based on the NOR flash memory architecture. It utilizes a grid of memory cells, each consisting of a floating-gate transistor. Data is stored by trapping electric charge within the floating gate, which alters the transistor's conductive properties. This allows for non-volatile data storage, meaning the data remains intact even when power is removed.

Detailed Application Field Plans

The S99FL164K0XMFI011 is widely used in various electronic devices that require reliable and high-speed data storage. Some common application fields include: - Consumer electronics (smartphones, tablets, digital cameras) - Automotive systems (infotainment, navigation, engine control units) - Industrial equipment (data loggers, control systems, robotics) - Networking devices (routers, switches, wireless access points)

Detailed and Complete Alternative Models

• S25FL128SAGMFI001: 128 Megabit NOR Flash Memory
• MT25QL256ABA1EW7-0SIT: 256 Megabit Quad SPI NOR Flash Memory
• W25Q64JVZPIQ: 64 Megabit Serial Flash Memory

Note: The above alternative models are provided as examples and may not cover all available options.

This entry provides an overview of the S99FL164K0XMFI011 flash memory, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models. With its reliable performance and compact design, the S99FL164K0XMFI011 is a suitable choice for various electronic devices requiring efficient data storage.