S70GL02GT11FHB013

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: Non-volatile, high-density, fast read/write speeds
• Package: Surface Mount Technology (SMT) package
• Essence: Stores data using electrically erasable programmable read-only memory (EEPROM) technology
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Capacity: 2 gigabits (256 megabytes)
• Organization: 32 megabytes x 64 pages x 512 bytes
• Voltage Range: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel NOR Flash
• Access Time: 110 ns (max)
• Erase/Program Suspend/Erase Resume Time: 20 μs (typ)
• Sector Erase Time: 1.5 ms (typ)
• Page Program Time: 200 μs (typ)

Detailed Pin Configuration

The S70GL02GT11FHB013 has a total of 56 pins. The pin configuration is as follows:

1. VCCQ
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. RE#
45. WP#
46. BYTE#
47. RY/BY#
48. VCC
49. GND
50. NC
51. NC
52. NC
53. NC
54. NC
55. NC
56. NC

Functional Features

• High-speed read and write operations
• Low power consumption
• Sector erase and page program operations
• Hardware data protection features (Write Protect, Block Locking)
• Software command set for easy integration into systems
• Reliable and durable data storage

Advantages and Disadvantages

Advantages: - High-density storage capacity - Fast access times - Non-volatile memory retains data even when power is removed - Low power consumption - Suitable for a wide range of electronic devices

Disadvantages: - Limited endurance (limited number of erase/write cycles) - Relatively higher cost compared to other types of memory

Working Principles

The S70GL02GT11FHB013 utilizes EEPROM technology to store data. It consists of a grid of memory cells, each capable of storing a single bit of information. These cells can be electrically programmed and erased using specific voltage levels. The memory cells are organized into sectors and pages, allowing for efficient read and write operations.

Detailed Application Field Plans

The S70GL02GT11FHB013 is commonly used in various electronic devices that require non-volatile data storage, such as: - Embedded systems - Automotive applications - Industrial control systems - Consumer electronics (e.g., digital cameras, set-top boxes)

Detailed and Complete Alternative Models

• S70GL02GT11FHB013A
• S70GL02GT11FHB013B
• S70GL02GT11FHB013C
• S70GL02GT11FHB013D

These alternative models offer similar specifications and functionality to the S70GL02GT11FHB013, providing options for different application requirements.

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