S34MS04G100TFB000

Product Overview

• Category: Memory Storage
• Use: Data storage and retrieval
• Characteristics: High capacity, fast access speed, non-volatile, compact size
• Package: Integrated circuit (IC)
• Essence: Flash memory chip
• Packaging/Quantity: Single chip in a standard IC package

Specifications

• Model: S34MS04G100TFB000
• Capacity: 4 gigabytes (GB)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Access Time: 70 nanoseconds (ns)
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The S34MS04G100TFB000 has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground reference
3. HOLD: Suspends ongoing operations
4. WP: Write protect input
5. SIO0: Serial data input/output
6. SIO1: Serial data input/output
7. SIO2: Serial data input/output
8. SIO3: Serial data input/output
9. CE#: Chip enable input
10. CLE: Command latch enable
11. ALE: Address latch enable
12. RE# / RESET#: Reset input
13. RP#/ACC: Ready/Busy output or Acceleration input
14. RB#/ACC: Ready/Busy output or Acceleration input

Functional Features

• High-speed data transfer using SPI interface
• Efficient erase and program operations
• Reliable data retention even without power
• Low power consumption
• Built-in error correction mechanism

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast access speed - Compact size - Non-volatile memory (data retention even without power) - High endurance (up to 100,000 erase/program cycles)

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited write endurance compared to some other non-volatile memory types

Working Principles

The S34MS04G100TFB000 is based on flash memory technology. It utilizes a grid of memory cells that can be electrically programmed and erased. The memory cells store data as electrical charges, which can be trapped or released within the floating gate structure. This allows for non-volatile storage of digital information.

Detailed Application Field Plans

The S34MS04G100TFB000 is widely used in various electronic devices and systems, including but not limited to:

1. Solid-state drives (SSDs)
2. Digital cameras
3. Mobile phones
4. Tablets
5. Automotive electronics
6. Industrial control systems
7. Medical devices
8. Gaming consoles

Detailed and Complete Alternative Models

1. S34MS02G100TFB000: 2GB capacity variant of the same flash memory chip.
2. S34MS08G100TFB000: 8GB capacity variant of the same flash memory chip.
3. S34MS16G100TFB000: 16GB capacity variant of the same flash memory chip.
4. S34MS32G100TFB000: 32GB capacity variant of the same flash memory chip.

These alternative models offer different storage capacities while maintaining similar characteristics and functionality.

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