Cypress Semiconductor Corp
Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
S34MS01G204BHA010
Zobrazit detail DataSheets

S34MS01G204BHA010

Product Overview

  • Category: Memory chip
  • Use: Data storage in electronic devices
  • Characteristics: High capacity, fast read/write speeds, low power consumption
  • Package: BGA (Ball Grid Array)
  • Essence: Non-volatile memory for long-term data retention
  • Packaging/Quantity: Single chip package

Specifications

  • Capacity: 1 gigabit (128 megabytes)
  • Interface: Parallel
  • Voltage: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Read/Write Speed: Up to 70 MB/s
  • Erase Time: Less than 2 seconds
  • Endurance: 100,000 erase/write cycles

Detailed Pin Configuration

The S34MS01G204BHA010 has a total of 48 pins. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. A25
  28. A26
  29. A27
  30. A28
  31. A29
  32. A30
  33. A31
  34. DQ0
  35. DQ1
  36. DQ2
  37. DQ3
  38. DQ4
  39. DQ5
  40. DQ6
  41. DQ7
  42. WE#
  43. CE#
  44. RE#
  45. WP#
  46. RY/BY#
  47. VSS
  48. NC

Functional Features

  • High-speed data transfer
  • Reliable and durable non-volatile memory
  • Low power consumption
  • Easy integration into electronic devices
  • Support for various operating temperatures

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read/write speeds - Long-term data retention - Low power consumption

Disadvantages: - Relatively high cost compared to other memory options - Limited endurance (100,000 erase/write cycles)

Working Principles

The S34MS01G204BHA010 is based on NAND flash memory technology. It stores data in a grid of memory cells that can be electrically programmed and erased. When data is written, charges are stored in the memory cells, representing binary values. To read the data, the charges are detected and converted back into digital information.

Detailed Application Field Plans

The S34MS01G204BHA010 memory chip is widely used in various electronic devices, including:

  1. Smartphones and tablets
  2. Digital cameras
  3. Solid-state drives (SSDs)
  4. Gaming consoles
  5. Automotive electronics
  6. Industrial control systems

Alternative Models

Here are some alternative models that offer similar functionality:

  1. S34MS02G204BHA010 - 2 gigabit capacity
  2. S34MS04G204BHA010 - 4 gigabit capacity
  3. S34MS08G204BHA010 - 8 gigabit capacity

These alternative models provide increased storage capacity while maintaining similar characteristics and pin configuration.

Word count: 345 words

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací S34MS01G204BHA010 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of S34MS01G204BHA010 in technical solutions:

  1. Q: What is the S34MS01G204BHA010? A: The S34MS01G204BHA010 is a specific model of NAND flash memory chip manufactured by a company called Cypress Semiconductor.

  2. Q: What is the storage capacity of the S34MS01G204BHA010? A: The S34MS01G204BHA010 has a storage capacity of 1 gigabit (Gb), which is equivalent to 128 megabytes (MB).

  3. Q: What are some typical applications for the S34MS01G204BHA010? A: The S34MS01G204BHA010 is commonly used in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

  4. Q: What is the interface protocol supported by the S34MS01G204BHA010? A: The S34MS01G204BHA010 supports the standard Serial Peripheral Interface (SPI) protocol for communication with the host device.

  5. Q: What is the operating voltage range of the S34MS01G204BHA010? A: The S34MS01G204BHA010 operates within a voltage range of 2.7V to 3.6V.

  6. Q: What is the maximum data transfer rate of the S34MS01G204BHA010? A: The S34MS01G204BHA010 has a maximum data transfer rate of up to 50 megabytes per second (MB/s).

  7. Q: Does the S34MS01G204BHA010 support hardware data protection features? A: Yes, the S34MS01G204BHA010 supports various hardware data protection features such as write protection and block locking.

  8. Q: Can the S34MS01G204BHA010 withstand extreme temperatures? A: Yes, the S34MS01G204BHA010 is designed to operate reliably within a wide temperature range, typically from -40°C to 85°C.

  9. Q: Is the S34MS01G204BHA010 compatible with other NAND flash memory chips? A: Yes, the S34MS01G204BHA010 is compatible with other NAND flash memory chips that adhere to the same interface protocol and voltage requirements.

  10. Q: Where can I find more detailed technical information about the S34MS01G204BHA010? A: You can refer to the datasheet provided by Cypress Semiconductor or visit their official website for more detailed technical information about the S34MS01G204BHA010.

Please note that the answers provided here are general and may vary depending on specific product specifications and application requirements.