Cypress Semiconductor Corp
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S34ML02G100BHA000
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S34ML02G100BHA000

Basic Information Overview

  • Category: Memory Storage Device
  • Use: Data storage and retrieval
  • Characteristics:
    • Non-volatile memory
    • High capacity (2GB)
    • High speed data transfer
    • Low power consumption
  • Package: BGA (Ball Grid Array)
  • Essence: Flash memory chip
  • Packaging/Quantity: Single chip in a package

Specifications

  • Capacity: 2GB
  • Interface: Serial Peripheral Interface (SPI)
  • Voltage: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Data Retention: Up to 10 years
  • Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The S34ML02G100BHA000 has a total of 48 pins. The pin configuration is as follows:

  1. VCC
  2. GND
  3. HOLD#
  4. WP#
  5. RESET#
  6. CE#
  7. CLE
  8. A0
  9. A1
  10. A2
  11. A3
  12. A4
  13. A5
  14. A6
  15. A7
  16. A8
  17. A9
  18. A10
  19. A11
  20. A12
  21. A13
  22. A14
  23. A15
  24. A16
  25. A17
  26. A18
  27. A19
  28. A20
  29. A21
  30. A22
  31. A23
  32. DQ0
  33. DQ1
  34. DQ2
  35. DQ3
  36. DQ4
  37. DQ5
  38. DQ6
  39. DQ7
  40. DQ8
  41. DQ9
  42. DQ10
  43. DQ11
  44. DQ12
  45. DQ13
  46. DQ14
  47. DQ15
  48. VSS

Functional Features

  • High-speed data transfer up to 100MHz
  • Advanced wear-leveling algorithm for extended lifespan
  • Error correction code (ECC) for data integrity
  • Power-saving features for low power consumption
  • Security features like hardware protection and secure erase

Advantages

  • Large storage capacity
  • Fast data transfer speed
  • Low power consumption
  • Reliable data retention
  • Enhanced security features

Disadvantages

  • Relatively high cost compared to other memory options
  • Limited endurance compared to some other memory technologies

Working Principles

The S34ML02G100BHA000 is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information using different voltage levels. When data is written, the memory cells are programmed by applying specific voltage levels. To read the data, the voltage levels are measured and converted back into digital information.

Detailed Application Field Plans

The S34ML02G100BHA000 is widely used in various electronic devices that require non-volatile storage, such as: - Smartphones and tablets - Solid-state drives (SSDs) - Digital cameras - Gaming consoles - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

  1. S34ML04G200BHA000 - 4GB capacity, similar specifications
  2. S34ML08G400BHA000 - 8GB capacity, similar specifications
  3. S34ML16G800BHA000 - 16GB capacity, similar specifications
  4. S34ML32G1600BHA000 - 32GB capacity, similar specifications

These alternative models offer higher storage capacities while maintaining similar characteristics and functionality.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací S34ML02G100BHA000 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of S34ML02G100BHA000 in technical solutions:

  1. Q: What is S34ML02G100BHA000? A: S34ML02G100BHA000 is a specific model of NAND flash memory chip manufactured by a company called Cypress Semiconductor.

  2. Q: What is the storage capacity of S34ML02G100BHA000? A: The S34ML02G100BHA000 has a storage capacity of 2 gigabytes (GB).

  3. Q: What is the interface used for connecting S34ML02G100BHA000 to a system? A: S34ML02G100BHA000 uses a standard NAND flash interface, such as the Open NAND Flash Interface (ONFI) or Toggle Mode.

  4. Q: What are some typical applications of S34ML02G100BHA000? A: S34ML02G100BHA000 is commonly used in various technical solutions, including embedded systems, consumer electronics, automotive applications, and industrial control systems.

  5. Q: What is the operating voltage range of S34ML02G100BHA000? A: The operating voltage range of S34ML02G100BHA000 is typically between 2.7 volts (V) and 3.6V.

  6. Q: Does S34ML02G100BHA000 support hardware encryption? A: No, S34ML02G100BHA000 does not have built-in hardware encryption capabilities.

  7. Q: Can S34ML02G100BHA000 withstand extreme temperatures? A: Yes, S34ML02G100BHA000 is designed to operate reliably in a wide temperature range, typically from -40°C to 85°C.

  8. Q: What is the maximum data transfer rate of S34ML02G100BHA000? A: The maximum data transfer rate of S34ML02G100BHA000 depends on the specific implementation and interface used, but it can typically reach speeds of up to 200 megabytes per second (MB/s).

  9. Q: Does S34ML02G100BHA000 support wear-leveling algorithms? A: Yes, S34ML02G100BHA000 supports wear-leveling algorithms to ensure even distribution of write/erase cycles across the memory cells, prolonging the lifespan of the chip.

  10. Q: Can S34ML02G100BHA000 be easily integrated into existing systems? A: Yes, S34ML02G100BHA000 is designed to be compatible with standard NAND flash interfaces, making it relatively easy to integrate into existing systems that support such interfaces.

Please note that the answers provided here are general and may vary depending on the specific implementation and requirements of a technical solution.