S34ML01G204TFA013

Product Overview

Category

S34ML01G204TFA013 belongs to the category of NAND flash memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: S34ML01G204TFA013 has a storage capacity of 1 gigabit (1 Gb).
• Fast data transfer rate: It offers high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: The product ensures data integrity and reliability through advanced error correction techniques.
• Low power consumption: S34ML01G204TFA013 is designed to consume minimal power, making it suitable for battery-powered devices.
• Long lifespan: With its robust design and wear-leveling algorithms, this NAND flash memory provides a long lifespan.

Package and Quantity

S34ML01G204TFA013 is available in a small form factor package, commonly known as a chip-scale package (CSP). It is supplied in reels or trays, with varying quantities depending on customer requirements.

Specifications

• Storage Capacity: 1 Gb
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 50 megabytes per second (MB/s)
• Package Type: Chip-Scale Package (CSP)

Detailed Pin Configuration

The pin configuration of S34ML01G204TFA013 is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | GND | Ground | | 3 | CS | Chip select | | 4 | SCK | Serial clock | | 5 | SI | Serial input | | 6 | SO | Serial output | | 7 | WP# | Write protect | | 8 | HOLD# | Hold |

Functional Features

• High-Speed Data Transfer: S34ML01G204TFA013 offers fast read and write speeds, enabling efficient data transfer between the memory and the host device.
• Error Correction: Advanced error correction techniques ensure data integrity and reliability, minimizing the risk of data corruption.
• Wear-Leveling Algorithm: The NAND flash memory utilizes a wear-leveling algorithm to evenly distribute write operations across memory cells, extending the lifespan of the product.
• Security Features: S34ML01G204TFA013 incorporates various security features such as password protection and data encryption to safeguard sensitive information.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Low power consumption
• Long lifespan
• Security features for data protection

Disadvantages

• Relatively higher cost compared to other types of memory
• Limited endurance (number of write cycles) compared to some alternative memory technologies

Working Principles

S34ML01G204TFA013 is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of data using a technique called multi-level cell (MLC) technology. When data is written or read, electrical charges are applied to the memory cells, altering their states to represent binary data.

Detailed Application Field Plans

S34ML01G204TFA013 finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

Some alternative models to S34ML01G204TFA013 include: - S34ML02G204TFA013: 2 Gb NAND flash memory with similar characteristics and features. - S34ML04G204TFA013: 4 Gb NAND flash memory offering higher storage capacity.

These alternative models provide options for different storage requirements while maintaining compatibility with the same interface and package type.

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