S34ML01G200TFB003

Product Overview

Category

S34ML01G200TFB003 belongs to the category of NAND flash memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: S34ML01G200TFB003 has a storage capacity of 1 gigabit (1 Gb).
• Fast data transfer rate: It offers high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: The product ensures reliable data storage and retrieval, minimizing the risk of data loss.
• Low power consumption: S34ML01G200TFB003 is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a compact form factor, enabling easy integration into various electronic devices.

Package and Quantity

S34ML01G200TFB003 is packaged in a small outline integrated circuit (SOIC) package. Each package contains one unit of the product.

Specifications

• Storage Capacity: 1 Gb
• Interface: NAND Flash
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 Mbps (Megabits per second)
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The pin configuration of S34ML01G200TFB003 is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | GND | Ground | | 3 | CE# | Chip Enable | | 4 | CLE | Command Latch Enable | | 5 | ALE | Address Latch Enable | | 6-13 | A0-A7 | Address Inputs | | 14 | RE# | Read Enable | | 15 | WE# | Write Enable | | 16-23 | DQ0-DQ7 | Data Inputs/Outputs | | 24 | R/B# | Ready/Busy Status |

Functional Features

• Block Erase: S34ML01G200TFB003 allows for erasing data in large blocks, enhancing efficiency.
• Page Program: It supports fast page programming, enabling quick data writing.
• Random Access: The product provides random access to individual memory cells, facilitating efficient data retrieval.
• Error Correction Code (ECC): S34ML01G200TFB003 incorporates ECC algorithms to ensure data integrity and reliability.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact form factor

Disadvantages

• Limited erase/program cycles
• Relatively higher cost compared to other memory technologies

Working Principles

S34ML01G200TFB003 utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate within each memory cell. When a voltage is applied, the trapped electrons determine the stored data. Reading involves sensing the presence or absence of charge in the memory cells.

Detailed Application Field Plans

S34ML01G200TFB003 finds applications in various electronic devices, including: 1. Smartphones and tablets for storing user data, apps, and operating systems. 2. Digital cameras for storing high-resolution photos and videos. 3. Solid-state drives (SSDs) for fast and reliable data storage in computers and servers. 4. Portable media players for storing music, videos, and other multimedia content.

Detailed and Complete Alternative Models

1. S34ML02G200TFB003: A similar NAND flash memory with double the storage capacity (2 Gb).
2. S34ML04G200TFB003: A higher-capacity alternative with 4 Gb of storage.
3. S34ML08G200TFB003: Offers even greater storage capacity with 8 Gb.

These alternative models provide options for different storage requirements in electronic devices.

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