S30MS02GR25TFW000

Product Overview

Category

S30MS02GR25TFW000 belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Compact size
• Low power consumption

Package

The S30MS02GR25TFW000 NAND Flash Memory comes in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital data quickly and reliably, providing a crucial component for modern electronic devices.

Packaging/Quantity

The S30MS02GR25TFW000 NAND Flash Memory is typically packaged individually or in bulk quantities, depending on the requirements of the customer or manufacturer.

Specifications

• Storage Capacity: 2GB
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The S30MS02GR25TFW000 NAND Flash Memory has the following pin configuration:

1. VCC - Power supply voltage
2. GND - Ground
3. CS - Chip select
4. SI - Serial input
5. SO - Serial output
6. WP - Write protect
7. HOLD - Hold input
8. RST - Reset input

Functional Features

• High-speed data transfer
• Error correction capabilities
• Wear-leveling algorithms for extended lifespan
• Block erase and program operations
• Protection against accidental data modification

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read and write speeds
• Low power consumption
• Compact size
• High endurance

Disadvantages

• Limited number of program/erase cycles
• Relatively higher cost compared to other memory technologies

Working Principles

The S30MS02GR25TFW000 NAND Flash Memory utilizes a series of floating-gate transistors to store digital data. It employs a technique called NAND flash memory, where data is stored in memory cells organized in a grid-like structure. The memory cells are programmed by applying voltage to the control gate and drain terminal, trapping electrons in the floating gate. To read the data, the charge level in the floating gate is measured.

Detailed Application Field Plans

The S30MS02GR25TFW000 NAND Flash Memory finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. S30MS02GR25TFW001 - 4GB NAND Flash Memory with similar specifications
2. S30MS04GR25TFW000 - 8GB NAND Flash Memory with similar specifications
3. S30MS08GR25TFW000 - 16GB NAND Flash Memory with similar specifications
4. S30MS16GR25TFW000 - 32GB NAND Flash Memory with similar specifications

These alternative models offer increased storage capacities while maintaining compatibility with the S30MS02GR25TFW000.

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