S30MS01GR25TFW110

Product Overview

Category

S30MS01GR25TFW110 belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer
• Non-volatile memory
• Compact size
• Low power consumption
• Durable and reliable

Package

The S30MS01GR25TFW110 NAND flash memory comes in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data quickly and reliably.

Packaging/Quantity

The S30MS01GR25TFW110 is typically packaged individually or in reels, depending on the manufacturer's specifications. The quantity per package may vary but is commonly available in multiples of 100 units.

Specifications

• Memory Capacity: 1GB (Gigabyte)
• Interface: Serial Peripheral Interface (SPI)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 50MB/s (Megabytes per second)
• Endurance: Up to 100,000 program/erase cycles
• Data Retention: Up to 10 years

Detailed Pin Configuration

The S30MS01GR25TFW110 has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power Supply | | 2 | GND | Ground | | 3 | CS | Chip Select | | 4 | SCLK | Serial Clock | | 5 | SI | Serial Input | | 6 | SO | Serial Output | | 7 | WP# | Write Protect | | 8 | HOLD# | Hold |

Functional Features

• High-speed read and write operations
• Error correction capabilities
• Wear-leveling algorithms for extended lifespan
• Block erase and page program operations
• Power-saving features such as deep power-down mode

Advantages and Disadvantages

Advantages

• Fast data transfer rate
• Compact size allows for easy integration into various devices
• Low power consumption prolongs battery life
• Durable and reliable, suitable for harsh environments
• Large storage capacity for a wide range of applications

Disadvantages

• Limited endurance compared to other types of memory
• Higher cost per gigabyte compared to traditional hard drives

Working Principles

The S30MS01GR25TFW110 NAND flash memory operates based on the principles of floating-gate transistors. It uses electrical charges to store data in memory cells, which can be accessed and modified through specific read and write operations.

Detailed Application Field Plans

The S30MS01GR25TFW110 NAND flash memory finds extensive use in the following application fields:

1. Mobile Devices: Smartphones, tablets, and portable media players benefit from its compact size and high-speed data access.
2. Digital Cameras: Enables fast image capture and storage for professional and consumer-grade cameras.
3. Solid-State Drives (SSDs): Provides high-performance storage solutions for computers and servers, improving overall system responsiveness.

Detailed and Complete Alternative Models

1. S30MS01GR25TFW120: Similar to S30MS01GR25TFW110 but with a higher memory capacity of 2GB.
2. S30MS01GR25TFW105: Lower memory capacity variant with 512MB storage.
3. S30MS01GR25TFW130: Higher endurance version with up to 200,000 program/erase cycles.

These alternative models offer varying specifications and capacities to cater to different application requirements.

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