Cypress Semiconductor Corp
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S30MS01GR25TFW100

S30MS01GR25TFW100

Product Overview

  • Category: Memory Storage Device
  • Use: Data storage and retrieval
  • Characteristics:
    • Non-volatile memory
    • High capacity
    • Fast read/write speeds
  • Package: Integrated circuit (IC)
  • Essence: Flash memory technology
  • Packaging/Quantity: Single unit

Specifications

  • Model: S30MS01GR25TFW100
  • Capacity: 1 GB
  • Interface: Serial Peripheral Interface (SPI)
  • Operating Voltage: 3.3V
  • Data Transfer Rate: Up to 50 MHz
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: 48-ball Fine-Pitch Ball Grid Array (FBGA)

Detailed Pin Configuration

The S30MS01GR25TFW100 has a total of 48 pins arranged in a fine-pitch ball grid array package. The pin configuration is as follows:

  1. VCC
  2. GND
  3. HOLD#
  4. WP#
  5. RESET#
  6. CE#
  7. IO0
  8. IO1
  9. IO2
  10. IO3
  11. IO4
  12. IO5
  13. IO6
  14. IO7
  15. CLK
  16. NC
  17. NC
  18. NC
  19. NC
  20. NC
  21. NC
  22. NC
  23. NC
  24. NC
  25. NC
  26. NC
  27. NC
  28. NC
  29. NC
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • High-speed data transfer
  • Low power consumption
  • Reliable and durable
  • Support for various memory management functions
  • Built-in error correction mechanisms

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read/write speeds - Compact package size - Wide operating temperature range

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited endurance (number of write cycles)

Working Principles

The S30MS01GR25TFW100 utilizes flash memory technology, which is a type of non-volatile memory that can retain data even when power is removed. It stores information in memory cells consisting of floating-gate transistors. The state of each memory cell is determined by the presence or absence of an electrical charge on the floating gate.

During operation, data is written to the memory cells by applying a high voltage to the control gate, which allows electrons to tunnel through the insulating layer onto the floating gate. To read data, a lower voltage is applied, and the resulting current flow indicates the stored value.

Detailed Application Field Plans

The S30MS01GR25TFW100 is widely used in various applications that require reliable and high-capacity data storage. Some common application fields include:

  1. Consumer Electronics:

    • Smartphones
    • Tablets
    • Digital cameras

  2. Automotive:

    • Infotainment systems
    • Navigation systems
    • Advanced driver-assistance systems (ADAS)

  3. Industrial:

    • Embedded systems
    • Robotics
    • Data loggers

  4. Networking:

    • Routers
    • Switches
    • Network attached storage (NAS)

Detailed and Complete Alternative Models

  1. S30MS01GR25TFW101

    • Capacity: 2 GB
    • Same specifications as S30MS01GR25TFW100

  2. S30MS01GR25TFW102

    • Capacity: 4 GB
    • Same specifications as S30MS01GR25TFW100

  3. S30MS01GR25TFW103

    • Capacity: 8 GB
    • Same specifications as S30MS01GR25TFW100

  4. S30MS01GR25TFW104

    • Capacity: 16 GB
    • Same specifications as S30MS01GR25TFW100

  5. S30MS01GR25TFW105

    • Capacity: 32 GB
    • Same specifications as S30MS01GR25TFW100

  6. S30MS01GR25TFW106

    • Capacity: 64 GB
    • Same specifications as S30MS01GR25TFW100

  7. S30MS01GR25TFW107

    • Capacity

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací S30MS01GR25TFW100 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of S30MS01GR25TFW100 in technical solutions:

  1. Q: What is S30MS01GR25TFW100? A: S30MS01GR25TFW100 is a specific model of flash memory chip manufactured by Cypress Semiconductor.

  2. Q: What is the storage capacity of S30MS01GR25TFW100? A: The S30MS01GR25TFW100 has a storage capacity of 1 gigabit (Gb).

  3. Q: What is the interface used for connecting S30MS01GR25TFW100 to a microcontroller or processor? A: S30MS01GR25TFW100 uses a standard parallel interface for communication with microcontrollers or processors.

  4. Q: What is the operating voltage range of S30MS01GR25TFW100? A: The operating voltage range of S30MS01GR25TFW100 is typically between 2.7V and 3.6V.

  5. Q: Can S30MS01GR25TFW100 be used in industrial temperature environments? A: Yes, S30MS01GR25TFW100 is designed to operate reliably in industrial temperature ranges from -40°C to +85°C.

  6. Q: Does S30MS01GR25TFW100 support hardware data protection features? A: Yes, S30MS01GR25TFW100 supports various hardware-based data protection features like block locking and password protection.

  7. Q: What is the maximum data transfer rate supported by S30MS01GR25TFW100? A: S30MS01GR25TFW100 supports a maximum data transfer rate of up to 50 megabytes per second (MB/s).

  8. Q: Can S30MS01GR25TFW100 be used as a boot device in embedded systems? A: Yes, S30MS01GR25TFW100 can be used as a boot device in embedded systems, thanks to its fast read access time and boot sector architecture.

  9. Q: Is S30MS01GR25TFW100 compatible with common flash file systems? A: Yes, S30MS01GR25TFW100 is compatible with popular flash file systems like FAT16, FAT32, and exFAT.

  10. Q: What are some typical applications of S30MS01GR25TFW100? A: S30MS01GR25TFW100 is commonly used in various applications such as automotive systems, industrial control systems, medical devices, and consumer electronics where reliable non-volatile storage is required.

Please note that the answers provided here are general and may vary depending on specific implementation requirements and datasheet specifications.