S29XS256RABBHW000

Basic Information Overview

• Category: Semiconductor Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed data transfer
  • Low power consumption
• Package: BGA (Ball Grid Array)
• Essence: Flash memory chip
• Packaging/Quantity: Single chip

Specifications

• Capacity: 256 megabits (32 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Erase/Program Cycles: Up to 100,000 cycles
• Data Retention: Up to 20 years

Detailed Pin Configuration

The S29XS256RABBHW000 has a total of 24 pins arranged as follows:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VCC | Power Supply (2.7V - 3.6V) | | 2 | GND | Ground | | 3 | HOLD# | Hold Input | | 4 | WP# | Write Protect Input | | 5 | SIO0 | Serial Data Input/Output 0 | | 6 | SIO1 | Serial Data Input/Output 1 | | 7 | SIO2 | Serial Data Input/Output 2 | | 8 | SIO3 | Serial Data Input/Output 3 | | 9 | SCK | Serial Clock Input | | 10 | CE# | Chip Enable Input | | 11 | RESET# | Reset Input | | 12 | NC | No Connection | | 13-24 | A0-A11 | Address Inputs |

Functional Features

• High-speed data transfer: The S29XS256RABBHW000 supports SPI interface, allowing for fast and efficient data transfer between the memory chip and the host device.
• Non-volatile memory: The flash memory retains stored data even when power is removed, ensuring data integrity and persistence.
• Low power consumption: The chip operates at low voltage and consumes minimal power, making it suitable for battery-powered devices.
• Reliable storage: With a high endurance of up to 100,000 erase/program cycles and data retention of up to 20 years, the chip provides reliable long-term storage.

Advantages

• Fast data transfer speed due to the SPI interface.
• Non-volatile memory ensures data persistence.
• Low power consumption extends battery life in portable devices.
• High endurance and data retention make it suitable for long-term storage applications.

Disadvantages

• Limited capacity compared to larger memory chips.
• Higher cost per megabyte compared to other memory technologies.
• Requires additional circuitry for interfacing with the host device.

Working Principles

The S29XS256RABBHW000 utilizes the principles of flash memory technology. It stores data by trapping electric charges within floating gate transistors. These charges represent binary information (0s and 1s) and can be electrically programmed or erased. The memory cells are organized into blocks, which can be individually erased or programmed. The SPI interface allows the host device to communicate with the memory chip, enabling read, write, and erase operations.

Detailed Application Field Plans

The S29XS256RABBHW000 is commonly used in various electronic devices that require non-volatile data storage, such as: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

• S29XS128RABBHW000: 128 megabit (16 megabyte) capacity, same specifications and features as S29XS256RABBHW000.
• S29XS512RABBHW000: 512 megabit (64 megabyte) capacity, same specifications and features as S29XS256RABBHW000.

Note: These alternative models offer different capacities while maintaining similar specifications and functionality.

This entry provides a comprehensive overview of the S29XS256RABBHW000 flash memory chip. Its high-speed data transfer, non-volatile nature, and low power consumption make it a versatile choice for various electronic devices. However, its limited capacity and higher cost per megabyte should be considered when selecting an appropriate memory solution.