S29WS128N0SBFW012

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: Non-volatile, high-speed read/write operations, low power consumption
• Package: Surface Mount Technology (SMT)
• Essence: Stores digital information in a solid-state format
• Packaging/Quantity: Available in reels or trays, quantity varies based on customer requirements

Specifications

• Capacity: 128 Megabits (16 Megabytes)
• Organization: 16 M x 8 bits
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns (max)
• Erase/Program Time: 2 ms (typical)

Detailed Pin Configuration

The S29WS128N0SBFW012 has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. CE#
19. WE#
20. OE#
21. BYTE#
22. NC
23. DQ0
24. DQ1
25. DQ2
26. DQ3
27. DQ4
28. DQ5
29. DQ6
30. DQ7
31. RY/BY#
32. RESET#
33. WP#
34. RP#
35. NC
36. NC
37. NC
38. NC
39. NC
40. VSS
41. VSS
42. VSS
43. VSS
44. VSS
45. VSS
46. VSS
47. VSS
48. VSS

Functional Features

• High-speed read and write operations for efficient data transfer
• Non-volatile memory retains data even when power is disconnected
• Low power consumption extends battery life in portable devices
• Reliable and durable, with a high number of erase/program cycles
• Built-in error correction codes ensure data integrity

Advantages and Disadvantages

Advantages

• Fast access times enable quick data retrieval
• Wide voltage range allows compatibility with various systems
• Compact package size saves board space
• High endurance ensures long-term reliability
• Suitable for a wide range of applications

Disadvantages

• Limited storage capacity compared to other memory technologies
• Higher cost per unit compared to traditional hard drives
• Susceptible to physical damage if mishandled or exposed to extreme conditions

Working Principles

The S29WS128N0SBFW012 utilizes NAND flash memory technology. It stores digital information by trapping electrons in a floating gate within each memory cell. When a specific voltage is applied, the trapped charge can be read or modified. This non-volatile memory retains data even when power is removed.

Detailed Application Field Plans

The S29WS128N0SBFW012 is widely used in various electronic devices, including: 1. Smartphones and tablets for storing operating systems and user data 2. Digital cameras for storing photos and videos 3. Automotive systems for firmware storage and data logging 4. Industrial equipment for program storage and data buffering 5. Consumer electronics such as gaming consoles and media players

Detailed and Complete Alternative Models

1. S29WS256N0SBFW012 - 256 Megabit (32 Megabyte) capacity
2. S29WS512N0SBFW012 - 512 Megabit (64 Megabyte) capacity
3. S29WS01GN0SBFW012 - 1 Gigabit (128 Megabyte) capacity
4. S29WS02GN0SBFW012 - 2 Gigabit (256 Megabyte) capacity

These alternative models offer increased storage capacities while maintaining similar specifications and pin configurations.

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