S29VS128RABBHW003

Basic Information Overview

• Category: Semiconductor Memory
• Use: Non-volatile memory for data storage in electronic devices
• Characteristics:
  • High-speed read and write operations
  • Low power consumption
  • Wide operating temperature range
  • Reliable data retention
• Package: BGA (Ball Grid Array)
• Essence: Flash memory chip
• Packaging/Quantity: Single chip per package

Specifications

• Capacity: 128 Megabits (16 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycles: Up to 100,000 cycles
• Data Retention: Up to 20 years

Detailed Pin Configuration

The S29VS128RABBHW003 has a total of 24 pins arranged as follows:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VCC | Power Supply (2.7V to 3.6V) | | 2 | GND | Ground | | 3 | HOLD# | Hold Input | | 4 | WP# | Write Protect Input | | 5 | SCK | Serial Clock Input | | 6 | SI | Serial Data Input | | 7 | SO | Serial Data Output | | 8 | CS# | Chip Select Input | | 9-16 | A0-A7 | Address Inputs | | 17-24 | IO0-IO7 | Data Inputs/Outputs |

Functional Features

• High-speed read and write operations enable fast data access.
• Low power consumption makes it suitable for battery-powered devices.
• Wide operating temperature range allows usage in various environments.
• Reliable data retention ensures long-term storage of information.

Advantages and Disadvantages

Advantages

• High-speed read and write operations improve overall system performance.
• Low power consumption extends battery life in portable devices.
• Wide operating temperature range enables usage in extreme conditions.
• Reliable data retention ensures data integrity over extended periods.

Disadvantages

• Limited capacity compared to other memory technologies.
• Erase/program cycles are limited, which may affect the lifespan of the chip.
• Higher cost per unit compared to some alternative memory solutions.

Working Principles

The S29VS128RABBHW003 is based on flash memory technology. It utilizes a floating-gate transistor structure to store data. When writing data, an electrical charge is applied to the floating gate, altering its threshold voltage. This change determines whether the cell represents a "0" or a "1". During read operations, the stored charge is measured to determine the stored data.

Detailed Application Field Plans

The S29VS128RABBHW003 is commonly used in various electronic devices that require non-volatile memory for data storage. Some typical application fields include: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., infotainment systems, instrument clusters) - Industrial equipment (e.g., control systems, data loggers) - Medical devices (e.g., patient monitoring systems, diagnostic equipment)

Detailed and Complete Alternative Models

• S25FL128SAGMFI001
• MX25L12835FM2I-10G
• W25Q128JVSIQ

These alternative models offer similar specifications and functionality to the S29VS128RABBHW003, providing options for different design requirements.

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