Cypress Semiconductor Corp
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S29GL512S11DHB013

S29GL512S11DHB013

Product Overview

Category

The S29GL512S11DHB013 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

  • High storage capacity: The S29GL512S11DHB013 offers a storage capacity of 512 megabits (64 megabytes), allowing for ample space to store large amounts of data.
  • Fast data transfer rate: With a high-speed interface, this flash memory device enables quick read and write operations, ensuring efficient data access.
  • Reliable performance: The S29GL512S11DHB013 is designed to provide reliable and consistent performance, making it suitable for critical applications.
  • Low power consumption: This flash memory device is engineered to consume minimal power, contributing to longer battery life in portable devices.
  • Durable design: The S29GL512S11DHB013 is built to withstand harsh environmental conditions, ensuring data integrity even in challenging situations.

Package and Quantity

The S29GL512S11DHB013 is available in a compact surface-mount package. Each package contains one unit of the flash memory device.

Specifications

  • Memory Type: Flash
  • Capacity: 512 megabits (64 megabytes)
  • Interface: Parallel
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: TSOP (Thin Small Outline Package)

Pin Configuration

The S29GL512S11DHB013 features a 48-pin configuration with the following pin assignments:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. A25
  28. ALE
  29. CLE
  30. WE#
  31. RE#
  32. BYTE#
  33. WP#
  34. RY/BY#
  35. VSS
  36. DQ0
  37. DQ1
  38. DQ2
  39. DQ3
  40. DQ4
  41. DQ5
  42. DQ6
  43. DQ7
  44. VCC
  45. VCC
  46. VSS
  47. VSS
  48. NC

Functional Features

  • Erase and Program Operations: The S29GL512S11DHB013 supports both sector erase and byte program operations, allowing for flexible data manipulation.
  • Block Locking: This flash memory device offers the capability to lock specific blocks, preventing accidental modification or erasure of critical data.
  • Read and Write Protection: The S29GL512S11DHB013 includes features to protect against unauthorized access, ensuring data security.
  • Error Correction: Built-in error correction mechanisms enhance data reliability by detecting and correcting errors during read and write operations.

Advantages and Disadvantages

Advantages

  • High storage capacity enables extensive data storage.
  • Fast data transfer rate ensures efficient data access.
  • Low power consumption contributes to longer battery life.
  • Durable design withstands harsh environmental conditions.
  • Reliable performance suitable for critical applications.

Disadvantages

  • Limited compatibility with certain older devices that do not support the parallel interface.
  • Higher cost compared to lower capacity flash memory options.

Working Principles

The S29GL512S11DHB013 utilizes a combination of floating-gate transistors and semiconductor technology to store data. It employs a parallel interface for communication with the host device, allowing for fast and reliable data transfer. The flash memory cells within the device can be electrically erased and programmed, enabling data storage and modification.

Detailed Application Field Plans

The S29GL512S11DHB013 is widely used in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Automotive infotainment systems - Industrial control systems - Medical equipment

Alternative Models

  1. S29GL256S10DHI010: 256 megabits (32 megabytes) flash memory with similar characteristics and package type.
  2. S29GL01GS11DHI020: 1 gigabit (128 megabytes) flash memory with similar characteristics and package type.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací S29GL512S11DHB013 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of S29GL512S11DHB013 in technical solutions:

  1. Q: What is the S29GL512S11DHB013? A: The S29GL512S11DHB013 is a flash memory device manufactured by Cypress Semiconductor. It has a capacity of 512 megabits (64 megabytes) and operates at a voltage of 3.3V.

  2. Q: What are the typical applications for the S29GL512S11DHB013? A: The S29GL512S11DHB013 is commonly used in various embedded systems, such as industrial automation, automotive electronics, consumer electronics, and networking equipment.

  3. Q: What is the interface of the S29GL512S11DHB013? A: The S29GL512S11DHB013 uses a parallel interface with a 16-bit data bus and control signals like address, chip enable, and write enable.

  4. Q: What is the operating temperature range of the S29GL512S11DHB013? A: The S29GL512S11DHB013 has an extended operating temperature range of -40°C to +85°C, making it suitable for harsh environments.

  5. Q: Can the S29GL512S11DHB013 be used as a boot device? A: Yes, the S29GL512S11DHB013 can be used as a boot device in many systems. It supports both single-word and multi-word booting options.

  6. Q: Does the S29GL512S11DHB013 support hardware or software data protection features? A: Yes, the S29GL512S11DHB013 provides several hardware and software data protection features, including sector protection, password protection, and block locking.

  7. Q: What is the erase time for the S29GL512S11DHB013? A: The S29GL512S11DHB013 has a typical erase time of 2 seconds per sector and a maximum erase time of 10 seconds per sector.

  8. Q: Can the S29GL512S11DHB013 be operated at a lower voltage than 3.3V? A: No, the S29GL512S11DHB013 requires a minimum operating voltage of 3.3V. Operating it at a lower voltage may result in unreliable performance or damage to the device.

  9. Q: Does the S29GL512S11DHB013 support in-system programming (ISP)? A: Yes, the S29GL512S11DHB013 supports in-system programming, allowing firmware updates without removing the memory from the system.

  10. Q: Is the S29GL512S11DHB013 compatible with other flash memory devices? A: The S29GL512S11DHB013 follows industry-standard pinouts and command sets, making it compatible with other similar flash memory devices from different manufacturers.

Please note that these answers are general and may vary depending on specific implementation details and requirements.