S29GL512S10FHI013

Product Overview

Category

The S29GL512S10FHI013 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile: The S29GL512S10FHI013 retains data even when power is turned off.
• High capacity: It has a storage capacity of 512 megabits (64 megabytes).
• Fast access time: The device offers a fast access time of 10 nanoseconds.
• Reliable: It provides reliable data storage with built-in error correction mechanisms.
• Low power consumption: The S29GL512S10FHI013 is designed to consume minimal power during operation.

Package

The S29GL512S10FHI013 is available in a compact surface-mount package. It is commonly packaged in a small outline integrated circuit (SOIC) package.

Essence

The essence of the S29GL512S10FHI013 lies in its ability to provide high-capacity, non-volatile storage with fast access times and low power consumption.

Packaging/Quantity

The S29GL512S10FHI013 is typically sold in reels or trays, with each reel or tray containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Storage Capacity: 512 megabits (64 megabytes)
• Access Time: 10 nanoseconds
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: Small Outline Integrated Circuit (SOIC)

Detailed Pin Configuration

The S29GL512S10FHI013 has a total of 48 pins. The pin configuration is as follows:

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ15 - Data input/output lines
4. WE# - Write enable
5. CE# - Chip enable
6. OE# - Output enable
7. RP# - Ready/Busy status
8. RY/BY# - Ready/Busy output
9. RESET# - Reset input
10. WP#/ACC - Write protect or accelerated programming control

Functional Features

• High-speed data transfer: The S29GL512S10FHI013 supports fast data transfer rates, allowing for efficient read and write operations.
• Error correction: The device incorporates error correction mechanisms to ensure data integrity.
• Block erase capability: It allows for the erasure of large blocks of data, enabling efficient memory management.
• Low power consumption: The S29GL512S10FHI013 is designed to minimize power consumption, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Reliable data storage
• Low power consumption

Disadvantages

• Limited compatibility with certain interfaces
• Relatively higher cost compared to lower-capacity flash memory devices

Working Principles

The S29GL512S10FHI013 utilizes a technology called NAND flash memory. It stores data in a series of memory cells that are organized into blocks. Each cell can store multiple bits of information using a technique called multi-level cell (MLC) technology. When data is written or read, electrical charges are applied to the memory cells, altering their state to represent binary data.

Detailed Application Field Plans

The S29GL512S10FHI013 finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems

Detailed and Complete Alternative Models

1. S29GL256S10FHI010: 256 megabit flash memory device with similar characteristics to the S29GL512S10FHI013.
2. S29GL1G10FHI020: 1 gigabit flash memory device with higher storage capacity than the S29GL512S10FHI013.
3. S29GL064S10FHI030: 64 megabit flash memory device with lower storage capacity than the S29GL512S10FHI013.

These alternative models offer different storage capacities and may have variations in access times and package types. It is recommended to choose the model that best suits the specific requirements of the application.

(Note: The above information is for illustrative purposes only and may not represent the actual alternative models available in the market.)

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