S29GL512N11FFVR20

Product Overview

Category

S29GL512N11FFVR20 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High capacity: Offers a storage capacity of 512 gigabits (64 gigabytes).
• Fast access time: Provides quick read and write operations.
• Reliable: Ensures data integrity with built-in error correction mechanisms.
• Low power consumption: Optimized for energy efficiency.
• Wide temperature range: Can operate in extreme temperature conditions.
• RoHS compliant: Meets environmental standards.

Package

The S29GL512N11FFVR20 flash memory device comes in a compact and industry-standard package. It is designed to be surface-mounted on printed circuit boards (PCBs) for easy integration into electronic systems.

Essence

The essence of S29GL512N11FFVR20 lies in its ability to store and retrieve large amounts of data reliably and efficiently.

Packaging/Quantity

This flash memory device is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in bulk quantities suitable for mass production.

Specifications

• Memory Type: NAND Flash
• Organization: 512Gb x 1
• Voltage Supply: 2.7V - 3.6V
• Interface: Parallel
• Access Time: 70ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: FBGA (Fine-Pitch Ball Grid Array)
• Pin Count: 64 pins

Detailed Pin Configuration

The S29GL512N11FFVR20 flash memory device has a total of 64 pins. The pin configuration is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RY/BY#: Ready/busy status output
8. RP#/RE#: Reset/erase control
9. WP#/ACC: Write protect/control
10. CLE: Command latch enable
11. ALE: Address latch enable
12. BYTE# (BYTE#1, BYTE#0): Byte enable control

Functional Features

• High-speed data transfer: Enables fast read and write operations.
• Block erase capability: Allows for efficient erasure of large memory blocks.
• Page program operation: Facilitates programming of individual memory pages.
• Error correction code (ECC): Enhances data reliability by detecting and correcting errors.
• Wear-leveling algorithm: Distributes data evenly across memory cells to extend the lifespan of the device.
• Security features: Supports various security mechanisms to protect stored data.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast access time
• Low power consumption
• Reliable data retention
• Wide temperature range operation
• RoHS compliant

Disadvantages

• Higher cost compared to lower-capacity flash memory devices
• Limited endurance (number of erase/write cycles)

Working Principles

The S29GL512N11FFVR20 flash memory device utilizes NAND flash technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using charge levels. When reading data, the charge levels are measured to determine the stored values. During writing or erasing, electrical voltages are applied to modify the charge levels in the cells.

Detailed Application Field Plans

The S29GL512N11FFVR20 flash memory device finds applications in various electronic devices and systems, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Automotive electronics - Industrial control systems - Medical devices - Gaming consoles

Detailed and Complete Alternative Models

1. S29GL256N10TFI010: 256Gb NAND flash memory with a different package type.
2. S34ML04G200BHI000: 4Gb NAND flash memory with higher endurance.
3. MT29F2G08ABAEAWP-IT:E: 2Gb NAND flash memory with lower power consumption.

These alternative models offer different specifications and features, providing options for various application requirements.

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