S29GL256S10DHSS50

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • High capacity
  • Non-volatile memory
  • Fast read and write speeds
  • Low power consumption
• Package: Surface Mount Technology (SMT)
• Essence: Provides reliable and efficient data storage solution for various electronic devices
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Capacity: 256 Megabits (32 Megabytes)
• Organization: 32 Megabit x 8-bit / 16 Megabit x 16-bit
• Voltage Range: 2.7V to 3.6V
• Access Time: 70 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• Endurance: 100,000 program/erase cycles
• Data Retention: 20 years

Detailed Pin Configuration

The S29GL256S10DHSS50 has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. WE#
31. RE#
32. BYTE#
33. WP#
34. RY/BY#
35. VSS
36. DQ0
37. DQ1
38. DQ2
39. DQ3
40. DQ4
41. DQ5
42. DQ6
43. DQ7
44. VSS
45. VCC
46. NC
47. NC
48. VSS

Functional Features

• High-speed data transfer
• Reliable and durable storage solution
• Easy integration into electronic devices
• Efficient power management
• Support for various read and write operations
• Error correction and detection mechanisms

Advantages

• Large storage capacity
• Fast access times
• Low power consumption
• Long data retention period
• Compatibility with different electronic devices
• Robust and reliable performance

Disadvantages

• Relatively higher cost compared to other memory options
• Limited write endurance compared to some alternative technologies

Working Principles

The S29GL256S10DHSS50 is based on NAND flash memory technology. It stores data in a grid of memory cells, where each cell can hold multiple bits of information. The memory cells are organized into blocks, which can be individually erased or programmed. When data is written, the memory cells are electrically programmed by trapping charges in the floating gate. To read data, the charges are sensed and interpreted as binary values.

Detailed Application Field Plans

The S29GL256S10DHSS50 is widely used in various electronic devices that require non-volatile data storage. Some common application fields include: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., infotainment systems, navigation systems) - Industrial equipment (e.g., control systems, data loggers) - Networking devices (e.g., routers, switches) - Medical devices (e.g., patient monitoring systems, diagnostic equipment)

Detailed and Complete Alternative Models

• S29GL128S10DHSS50: 128 Megabit version of the same flash memory
• S29GL512S10DHSS50: 512 Megabit version of the same flash memory
• S29GL256P10TFI010: Similar flash memory with different package and interface options

Note: This is not an exhaustive list of alternative models. Please refer to the manufacturer's documentation for a complete list.

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