S29GL256P11TFI013

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High capacity
  • Fast read and write speeds
  • Low power consumption
• Package: TFBGA (Thin Fine-Pitch Ball Grid Array)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Available in reels, quantity depends on customer requirements

Specifications

• Capacity: 256 Megabits (32 Megabytes)
• Organization: 32 Megabits x 8 bits
• Voltage Range: 2.7V to 3.6V
• Access Time: 70 ns (max)
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Endurance: 100,000 program/erase cycles (minimum)
• Data Retention: 20 years (minimum)

Detailed Pin Configuration

The S29GL256P11TFI013 has a total of 56 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CE#
30. WE#
31. RE#
32. BYTE#
33. WP#
34. RY/BY#
35. DQ0
36. DQ1
37. DQ2
38. DQ3
39. DQ4
40. DQ5
41. DQ6
42. DQ7
43. VSS
44. VSS
45. VSS
46. VSS
47. VSS
48. VSS
49. VSS
50. VSS
51. VSS
52. VSS
53. VSS
54. VSS
55. VSS
56. VSS

Functional Features

• High-speed data transfer
• Sector erase and program operations
• Automatic program and erase suspension
• Unlock bypass program command
• Hardware reset pin for system initialization
• Software data protection features
• Erase Suspend/Erase Resume capability

Advantages and Disadvantages

Advantages: - High capacity allows for ample data storage - Fast read and write speeds enable quick data access - Low power consumption helps conserve energy - Reliable and durable, with a long data retention period - Easy to integrate into electronic devices

Disadvantages: - Limited endurance compared to other memory technologies - Higher cost per unit compared to some alternatives - Requires additional circuitry for proper interfacing

Working Principles

The S29GL256P11TFI013 is based on the NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the voltage levels applied to it. The memory cells are accessed using an address bus, and data is transferred through a parallel interface. The device uses various control signals to perform operations such as reading, writing, erasing, and protecting data.

Detailed Application Field Plans

The S29GL256P11TFI013 is widely used in various electronic devices that require non-volatile data storage. Some common application fields include: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., infotainment systems, navigation systems) - Industrial equipment (e.g., control systems, data loggers) - Networking devices (e.g., routers, switches) - Medical devices (e.g., patient monitoring systems, diagnostic equipment)

Detailed and Complete Alternative Models

1. S29GL128P10TFI010 - 128 Megabit Flash Memory, similar specifications to S29GL256P11TFI013 but with half the capacity.
2. S29GL512P12TFI020 - 512 Megabit Flash Memory, higher capacity version of S29GL256P11TFI013.
3. S29GL064P11TFI040 - 64 Megabit Flash Memory, lower capacity version of S29GL256P11TFI013.

These alternative models offer different capacity options while maintaining similar characteristics and functionality to the S29GL256P11TFI013.

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