S29GL256P11TFI010D

Product Overview

Category

S29GL256P11TFI010D belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile: The data stored in S29GL256P11TFI010D is retained even when power is turned off.
• High capacity: It has a storage capacity of 256 gigabytes (GB), allowing for ample storage of data.
• Fast access times: The device offers quick read and write speeds, enabling efficient data transfer.
• Reliable: S29GL256P11TFI010D is designed to withstand harsh environmental conditions and has a high endurance rating.

Package

The S29GL256P11TFI010D flash memory device comes in a compact and durable package, ensuring easy integration into electronic devices. It is available in a surface-mount package (SMT) format.

Essence

The essence of S29GL256P11TFI010D lies in its ability to provide reliable and high-capacity data storage in a compact form factor.

Packaging/Quantity

The S29GL256P11TFI010D flash memory device is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package varies but is commonly around 100 units.

Specifications

• Storage Capacity: 256 GB
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 100 megabits per second (Mbps)

Detailed Pin Configuration

The S29GL256P11TFI010D flash memory device features a standard pin configuration, as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. HOLD: Hold input for suspending data transfer
4. WP: Write protect input for preventing data modification
5. SCK: Serial clock input for SPI communication
6. SI: Serial data input for SPI communication
7. SO: Serial data output for SPI communication
8. CS: Chip select input for device selection

Functional Features

• High-speed data transfer: The S29GL256P11TFI010D flash memory device supports fast read and write operations, facilitating efficient data transfer.
• Error correction: It incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear leveling: The device employs wear-leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the flash memory.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rates
• Compact form factor
• Reliable and durable
• Suitable for a wide range of electronic devices

Disadvantages

• Relatively higher cost compared to lower-capacity flash memory devices
• Limited compatibility with older devices that do not support high-capacity storage

Working Principles

The S29GL256P11TFI010D flash memory device utilizes NAND flash technology. It stores data in memory cells organized in a grid-like structure. When data is written, electrical charges are stored in the memory cells, representing binary information. During read operations, these charges are detected and converted back into digital data.

Detailed Application Field Plans

The S29GL256P11TFI010D flash memory device finds applications in various fields, including: - Mobile devices: Smartphones, tablets, and portable media players - Digital cameras: For storing photos and videos - Automotive electronics: Infotainment systems, navigation units, and instrument clusters - Industrial equipment: Data loggers, control systems, and embedded devices

Detailed and Complete Alternative Models

1. S29GL128P11TFI010D: A similar flash memory device with a storage capacity of 128 GB.
2. S29GL512P11TFI010D: A higher-capacity alternative with a storage capacity of 512 GB.
3. S29GL256P21TFI010D: Another variant with enhanced performance characteristics.

Please note that the above list is not exhaustive, and there may be other alternative models available in the market.

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