Cypress Semiconductor Corp
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S29GL256N11FFVR22

S29GL256N11FFVR22

Product Overview

  • Category: Flash Memory
  • Use: Data storage and retrieval in electronic devices
  • Characteristics: High capacity, non-volatile, fast read/write speeds
  • Package: VR22 package
  • Essence: Non-volatile memory for reliable data storage
  • Packaging/Quantity: Varies based on manufacturer specifications

Specifications

  • Model: S29GL256N11FFVR22
  • Memory Type: NOR Flash
  • Capacity: 256 Megabits (32 Megabytes)
  • Voltage Range: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Interface: Parallel
  • Access Time: 110 ns
  • Organization: 16-bit word
  • Page Size: 528 Bytes
  • Erase/Program Cycles: 100,000 minimum

Detailed Pin Configuration

The S29GL256N11FFVR22 has a 56-pin configuration with the following pin functions:

  1. A0-A15: Address Inputs
  2. DQ0-DQ15: Data Input/Output
  3. WE#: Write Enable
  4. CE#: Chip Enable
  5. OE#: Output Enable
  6. RP#/BYTE#: Reset/Byte#
  7. RY/BY#: Ready/Busy#
  8. VCC: Power Supply
  9. VSS: Ground

Functional Features

  • High-speed read and write operations
  • Sector erase and chip erase capabilities
  • Built-in program and erase algorithms
  • Automatic sleep mode for power-saving
  • Hardware and software protection mechanisms
  • Error correction code (ECC) support

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read/write speeds - Reliable and durable - Low power consumption - Support for various operating temperatures

Disadvantages: - Higher cost compared to other memory options - Limited erase/program cycles

Working Principles

The S29GL256N11FFVR22 is based on NOR flash memory technology. It stores data in a non-volatile manner, meaning the data remains even when power is removed. The memory cells are organized into sectors, which can be individually erased or programmed. The device uses an address bus to select specific memory locations and a data bus to transfer information.

Detailed Application Field Plans

The S29GL256N11FFVR22 is widely used in various electronic devices that require reliable and high-capacity data storage. Some common application fields include:

  1. Embedded systems
  2. Automotive electronics
  3. Industrial control systems
  4. Networking equipment
  5. Consumer electronics

Alternative Models

  • S29GL128N10TFI010: 128 Megabit NOR Flash Memory
  • S29GL512N11TFI020: 512 Megabit NOR Flash Memory
  • S29GL01GN11TFI030: 1 Gigabit NOR Flash Memory
  • S29GL02GN11TFI040: 2 Gigabit NOR Flash Memory

These alternative models offer different capacities and specifications to suit varying requirements.

Word count: 305 words

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací S29GL256N11FFVR22 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of S29GL256N11FFVR22 in technical solutions:

  1. Q: What is the S29GL256N11FFVR22? A: The S29GL256N11FFVR22 is a flash memory device manufactured by Cypress Semiconductor. It has a capacity of 256 megabits (32 megabytes) and operates at a voltage of 2.7V to 3.6V.

  2. Q: What are the typical applications of S29GL256N11FFVR22? A: The S29GL256N11FFVR22 is commonly used in various electronic devices such as routers, switches, set-top boxes, industrial control systems, and automotive applications.

  3. Q: What is the interface of S29GL256N11FFVR22? A: The S29GL256N11FFVR22 uses a parallel NOR Flash interface with a 16-bit data bus.

  4. Q: What is the operating temperature range of S29GL256N11FFVR22? A: The S29GL256N11FFVR22 can operate within a temperature range of -40°C to +85°C.

  5. Q: What is the maximum clock frequency supported by S29GL256N11FFVR22? A: The S29GL256N11FFVR22 supports a maximum clock frequency of 70 MHz.

  6. Q: Does S29GL256N11FFVR22 support hardware or software write protection? A: Yes, the S29GL256N11FFVR22 supports both hardware and software write protection mechanisms to prevent accidental modification of data.

  7. Q: Can S29GL256N11FFVR22 be used for code execution? A: Yes, the S29GL256N11FFVR22 can be used for code execution as it supports random access read operations.

  8. Q: What is the erase time of S29GL256N11FFVR22? A: The erase time of S29GL256N11FFVR22 is typically around 2 seconds for a full chip erase operation.

  9. Q: Does S29GL256N11FFVR22 support sector erase? A: Yes, the S29GL256N11FFVR22 supports sector erase, allowing specific sectors to be erased instead of the entire chip.

  10. Q: Can S29GL256N11FFVR22 be used in battery-powered devices? A: Yes, the S29GL256N11FFVR22 has low power consumption and can be used in battery-powered devices, making it suitable for portable applications.

Please note that these answers are general and may vary depending on the specific implementation and requirements of your technical solution.