Cypress Semiconductor Corp
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S29GL256N11FFA013

S29GL256N11FFA013

Product Overview

  • Category: Flash Memory
  • Use: Data storage and retrieval in electronic devices
  • Characteristics: High capacity, non-volatile, fast read/write speeds
  • Package: Integrated Circuit (IC)
  • Essence: Non-volatile memory for long-term data storage
  • Packaging/Quantity: Typically sold in reels or trays containing multiple ICs

Specifications

  • Memory Type: NOR Flash
  • Capacity: 256 Megabits (32 Megabytes)
  • Organization: 16M x 16 bits
  • Voltage Range: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Interface: Parallel
  • Access Time: 90 ns
  • Page Size: 512 bytes
  • Erase/Program Times: 10,000 cycles minimum

Pin Configuration

The S29GL256N11FFA013 has a total of 48 pins. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. DQ0
  19. DQ1
  20. DQ2
  21. DQ3
  22. DQ4
  23. DQ5
  24. DQ6
  25. DQ7
  26. DQ8
  27. DQ9
  28. DQ10
  29. DQ11
  30. DQ12
  31. DQ13
  32. DQ14
  33. DQ15
  34. WE#
  35. CE#
  36. RE#
  37. BYTE#
  38. ALE#
  39. WP#
  40. RY/BY#
  41. VSS
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. VCC

Functional Features

  • High-speed read and write operations
  • Sector erase capability for efficient data management
  • Built-in hardware and software protection mechanisms
  • Low power consumption during standby mode
  • Reliable operation in harsh environmental conditions

Advantages

  • Large storage capacity for extensive data storage needs
  • Fast access times for quick data retrieval
  • Non-volatile memory ensures data retention even without power
  • Robust design for reliable performance in various applications

Disadvantages

  • Higher cost compared to other types of memory
  • Limited erase/write cycles may require careful management in certain use cases

Working Principles

The S29GL256N11FFA013 is based on NOR flash memory technology. It utilizes a grid of memory cells, where each cell stores a bit of information as a charge. The memory cells are organized into sectors, allowing for efficient erasure and programming of data. When data is read from or written to the memory, specific voltage levels and control signals are applied to the appropriate pins, enabling the desired operation.

Application Field Plans

The S29GL256N11FFA013 is widely used in various electronic devices that require non-volatile data storage, such as:

  1. Embedded systems
  2. Automotive electronics
  3. Industrial control systems
  4. Consumer electronics
  5. Networking equipment

Alternative Models

  1. S29GL128N10TFI010 - 128 Megabit NOR Flash Memory
  2. S29GL512N11FFI020 - 512 Megabit NOR Flash Memory
  3. S29GL01GN10TFI030 - 1 Gigabit NOR Flash Memory

These alternative models offer different capacities and specifications to cater to diverse application requirements.

Word count: 455 words

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací S29GL256N11FFA013 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of S29GL256N11FFA013 in technical solutions:

  1. Q: What is the S29GL256N11FFA013? A: The S29GL256N11FFA013 is a flash memory device manufactured by Cypress Semiconductor. It has a capacity of 256 megabits (32 megabytes) and operates at a voltage of 3.0 to 3.6 volts.

  2. Q: What are the typical applications of S29GL256N11FFA013? A: The S29GL256N11FFA013 is commonly used in various embedded systems, such as automotive electronics, industrial control systems, consumer electronics, and networking equipment.

  3. Q: What is the interface of S29GL256N11FFA013? A: The S29GL256N11FFA013 uses a parallel NOR Flash interface with a 16-bit data bus and various control signals for read, write, and erase operations.

  4. Q: What is the maximum operating frequency of S29GL256N11FFA013? A: The S29GL256N11FFA013 can operate at a maximum frequency of 66 MHz, allowing for fast data transfer rates.

  5. Q: Can S29GL256N11FFA013 be used for code execution? A: Yes, the S29GL256N11FFA013 can be used for storing and executing program code. It supports random access read operations, making it suitable for code execution.

  6. Q: How reliable is S29GL256N11FFA013? A: The S29GL256N11FFA013 offers high reliability with features like advanced error correction codes (ECC), wear-leveling algorithms, and data retention for up to 20 years.

  7. Q: Can S29GL256N11FFA013 be easily integrated into existing systems? A: Yes, the S29GL256N11FFA013 is designed to be compatible with industry-standard interfaces and protocols, making it relatively easy to integrate into existing systems.

  8. Q: What are the power requirements for S29GL256N11FFA013? A: The S29GL256N11FFA013 requires a supply voltage of 3.0 to 3.6 volts and has low power consumption, making it suitable for battery-powered devices.

  9. Q: How can I program or erase the S29GL256N11FFA013? A: The S29GL256N11FFA013 supports various programming and erasing methods, including software-based operations using dedicated commands or hardware-based operations using external control signals.

  10. Q: Are there any development tools or resources available for working with S29GL256N11FFA013? A: Yes, Cypress Semiconductor provides development tools, datasheets, application notes, and technical support to assist engineers in designing and implementing solutions using the S29GL256N11FFA013.

Please note that these answers are general and may vary depending on specific implementation details and requirements.