Cypress Semiconductor Corp
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S29GL256N11FAIIH2

S29GL256N11FAIIH2

Product Overview

  • Category: Flash Memory
  • Use: Data storage and retrieval in electronic devices
  • Characteristics:
    • Non-volatile memory
    • High-density storage capacity
    • Fast read and write speeds
    • Reliable and durable
  • Package: Integrated Circuit (IC)
  • Essence: Provides a reliable and high-capacity solution for data storage in electronic devices.
  • Packaging/Quantity: Typically sold in reels or trays containing multiple units.

Specifications

  • Manufacturer: Cypress Semiconductor
  • Memory Type: NOR Flash
  • Memory Size: 256 Megabits (32 Megabytes)
  • Organization: 32M x 8 bits
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Interface: Parallel
  • Access Time: 90 ns (max)
  • Erase/Program Cycle Endurance: 100,000 cycles (typical)

Detailed Pin Configuration

The S29GL256N11FAIIH2 has a total of 48 pins. The pin configuration is as follows:

  1. VCC (Power Supply)
  2. A0-A20 (Address Inputs)
  3. DQ0-DQ7 (Data Inputs/Outputs)
  4. WE# (Write Enable)
  5. CE# (Chip Enable)
  6. OE# (Output Enable)
  7. RP#/BYTE# (Reset/Byte#)
  8. RY/BY# (Ready/Busy#)
  9. A21-A22 (Address Inputs)
  10. A23-A24 (Address Inputs)
  11. A25-A26 (Address Inputs)
  12. A27-A28 (Address Inputs)
  13. A29-A30 (Address Inputs)
  14. A31-A32 (Address Inputs)
  15. A33-A34 (Address Inputs)
  16. A35-A36 (Address Inputs)
  17. A37-A38 (Address Inputs)
  18. A39-A40 (Address Inputs)
  19. A41-A42 (Address Inputs)
  20. A43-A44 (Address Inputs)
  21. A45-A46 (Address Inputs)
  22. A47-A48 (Address Inputs)
  23. A49-A50 (Address Inputs)
  24. A51-A52 (Address Inputs)
  25. A53-A54 (Address Inputs)
  26. A55-A56 (Address Inputs)
  27. A57-A58 (Address Inputs)
  28. A59-A60 (Address Inputs)
  29. A61-A62 (Address Inputs)
  30. A63-A64 (Address Inputs)
  31. VSS (Ground)

Functional Features

  • High-Speed Read and Write: The S29GL256N11FAIIH2 offers fast read and write speeds, allowing for efficient data storage and retrieval.
  • Reliability: This flash memory device is designed to be highly reliable, ensuring data integrity over extended periods of use.
  • High-Density Storage: With a capacity of 256 Megabits, the S29GL256N11FAIIH2 provides ample space for storing large amounts of data.
  • Versatile Interface: The parallel interface allows for easy integration into various electronic devices.

Advantages and Disadvantages

Advantages: - Fast read and write speeds - High-density storage capacity - Reliable and durable - Versatile interface

Disadvantages: - Limited erase/program cycle endurance compared to some other flash memory technologies

Working Principles

The S29GL256N11FAIIH2 utilizes NOR flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed and erased. When reading data, the stored charge is detected, allowing for retrieval of the stored information.

Detailed Application Field Plans

The S29GL256N11FAIIH2 is commonly used in various electronic devices that require non-volatile data storage, such as:

  1. Embedded Systems
  2. Automotive Electronics
  3. Consumer Electronics (e.g., digital cameras, portable media players)
  4. Industrial Control Systems
  5. Networking Equipment

Detailed and Complete Alternative Models

  1. S29GL128N10TFI010 - 128 Megabit NOR Flash Memory
  2. S29GL512N11FFI020 - 512 Megabit NOR Flash Memory
  3. S29GL01GN11TFI020 - 1 Gigabit NOR Flash Memory
  4. S29GL02GN11TFI020 - 2 Gigabit NOR Flash Memory
  5. S29GL04GN11TFI020 - 4 Gigabit NOR Flash Memory

These alternative models offer different memory sizes to cater to specific application requirements.

*Word count: 530 words

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací S29GL256N11FAIIH2 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of S29GL256N11FAIIH2 in technical solutions:

  1. Q: What is the S29GL256N11FAIIH2? A: The S29GL256N11FAIIH2 is a flash memory device manufactured by Cypress Semiconductor. It has a capacity of 256 megabits (32 megabytes) and operates at a voltage range of 2.7V to 3.6V.

  2. Q: What are the typical applications for S29GL256N11FAIIH2? A: The S29GL256N11FAIIH2 is commonly used in various embedded systems, such as automotive electronics, industrial control systems, consumer electronics, and networking equipment.

  3. Q: What is the interface of S29GL256N11FAIIH2? A: The S29GL256N11FAIIH2 uses a parallel NOR Flash interface with a 16-bit data bus.

  4. Q: What is the maximum operating frequency of S29GL256N11FAIIH2? A: The S29GL256N11FAIIH2 supports a maximum operating frequency of 66 MHz.

  5. Q: Can S29GL256N11FAIIH2 be used for code execution? A: Yes, the S29GL256N11FAIIH2 can be used for storing and executing program code, making it suitable for firmware storage in microcontrollers and other embedded systems.

  6. Q: Does S29GL256N11FAIIH2 support random access read and write operations? A: Yes, the S29GL256N11FAIIH2 supports random access read and write operations, allowing efficient data retrieval and modification.

  7. Q: What is the typical endurance of S29GL256N11FAIIH2? A: The S29GL256N11FAIIH2 has a typical endurance of 100,000 program/erase cycles, ensuring reliable and long-lasting operation.

  8. Q: Does S29GL256N11FAIIH2 support hardware and software data protection features? A: Yes, the S29GL256N11FAIIH2 provides various hardware and software data protection features, such as block locking, password protection, and sector protection.

  9. Q: Can S29GL256N11FAIIH2 operate in harsh environments? A: Yes, the S29GL256N11FAIIH2 is designed to operate in a wide temperature range (-40°C to +85°C) and can withstand high levels of shock and vibration.

  10. Q: Is S29GL256N11FAIIH2 compatible with other flash memory devices? A: Yes, the S29GL256N11FAIIH2 is compatible with other parallel NOR Flash devices, allowing for easy integration into existing systems or upgrades.

Please note that these answers are general and may vary depending on specific implementation details and requirements.