S29GL128S10FHI020

Basic Information Overview

Category: Flash Memory
Use: Data storage in electronic devices
Characteristics:
- High capacity (128 gigabits)
- High-speed data transfer (10 nanoseconds)
- Low power consumption
Package: Surface Mount Technology (SMT) package
Essence: Non-volatile memory for long-term data retention
Packaging/Quantity: Available in reels, with 250 units per reel

Specifications

Capacity: 128 gigabits
Access Time: 10 nanoseconds
Supply Voltage: 2.7V to 3.6V
Operating Temperature Range: -40°C to +85°C
Interface: Parallel
Organization: 16M words x 8 bits or 8M words x 16 bits
Erase/Program Cycles: 100,000 cycles
Data Retention: 20 years

Detailed Pin Configuration

The S29GL128S10FHI020 has a total of 48 pins. The pin configuration is as follows:

VCCQ
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20
A21
A22
A23
A24
A25
A26
A27
A28
A29
A30
A31
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
WE#
CE#
RE#
WP#
RY/BY#
VSSQ
VCC

Functional Features

High-speed data transfer for efficient data storage and retrieval
Reliable non-volatile memory for long-term data retention
Low power consumption for energy-efficient operation
Wide operating temperature range for versatile applications
Easy integration into electronic devices with parallel interface

Advantages and Disadvantages

Advantages

Large capacity for storing a vast amount of data
Fast access time for quick data retrieval
Low power consumption extends battery life in portable devices
Long data retention period ensures data integrity over time

Disadvantages

Limited erase/program cycles may affect the lifespan of the memory
Parallel interface may require more complex circuitry compared to serial interfaces

Working Principles

The S29GL128S10FHI020 is based on NAND flash memory technology. It utilizes a grid of memory cells, where each cell can store multiple bits of data. The memory cells are organized into blocks, which can be erased or programmed independently. When data is written to the memory, it is stored by charging or discharging the floating gate within each memory cell. This charge determines the state of the cell, representing either a "0" or a "1". The stored data can be read by sensing the voltage level of the memory cells.

Detailed Application Field Plans

The S29GL128S10FHI020 is suitable for various applications that require high-capacity and high-speed data storage. Some potential application fields include: - Solid-state drives (SSDs) - Digital cameras - Set-top boxes - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

S29GL064S10FHI020: 64 gigabit capacity, same characteristics and package as S29GL128S10FHI020.
S29GL256S10FHI020: 256 gigabit capacity, same characteristics and package as S29GL128S10FHI020.
S29GL512S10FHI020: 512 gigabit capacity, same characteristics and package as S29GL128S10FHI020.

These alternative models offer different capacities while maintaining similar features and packaging options.

Word count: 496 words

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací S29GL128S10FHI020 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of S29GL128S10FHI020 in technical solutions:

Q: What is the S29GL128S10FHI020? A: The S29GL128S10FHI020 is a flash memory device manufactured by Cypress Semiconductor. It has a capacity of 128 megabits (16 megabytes) and operates at a voltage of 2.7V to 3.6V.
Q: What are the typical applications of S29GL128S10FHI020? A: The S29GL128S10FHI020 is commonly used in various embedded systems, such as automotive electronics, industrial control systems, consumer electronics, and networking equipment.
Q: What is the interface of S29GL128S10FHI020? A: The S29GL128S10FHI020 uses a parallel interface with 16 data lines, along with control and address lines for communication with the host system.
Q: What is the operating temperature range of S29GL128S10FHI020? A: The S29GL128S10FHI020 is designed to operate within a temperature range of -40°C to +85°C, making it suitable for both commercial and industrial applications.
Q: Does S29GL128S10FHI020 support hardware or software write protection? A: Yes, the S29GL128S10FHI020 supports both hardware and software write protection mechanisms to prevent accidental or unauthorized modification of data.
Q: Can S29GL128S10FHI020 be used for code execution? A: Yes, the S29GL128S10FHI020 can be used for code execution as it supports random access read operations, making it suitable for storing program code.
Q: What is the erase and program cycle endurance of S29GL128S10FHI020? A: The S29GL128S10FHI020 has a typical endurance of 100,000 erase/program cycles, ensuring reliable and long-lasting operation.
Q: Does S29GL128S10FHI020 support sector or block erase? A: Yes, the S29GL128S10FHI020 supports both sector and block erase operations, allowing for efficient management of data storage.
Q: What is the power consumption of S29GL128S10FHI020 during active and standby modes? A: The S29GL128S10FHI020 has low power consumption, with typical values of around 30mA during active mode and less than 1µA during standby mode.
Q: Is S29GL128S10FHI020 backward compatible with other flash memory devices? A: Yes, the S29GL128S10FHI020 is designed to be backward compatible with industry-standard flash memory devices, making it easy to integrate into existing systems.

Please note that these answers are general and may vary depending on specific implementation details and requirements.