S29GL128P11TFI013

Product Overview

Category

S29GL128P11TFI013 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• Non-volatile: The data stored in S29GL128P11TFI013 is retained even when power is turned off.
• High capacity: It has a storage capacity of 128 gigabits (16 gigabytes).
• Fast access times: Provides quick read and write operations.
• Reliable: Offers high endurance and data retention capabilities.
• Compact package: Comes in a small form factor, suitable for integration into compact electronic devices.

Package and Quantity

S29GL128P11TFI013 is available in a surface-mount package. The exact package type may vary depending on the manufacturer. It is typically sold in quantities of one or more units per package.

Specifications

• Storage Capacity: 128 gigabits (16 gigabytes)
• Interface: Parallel or Serial
• Voltage Range: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 100 megabytes per second (MB/s)
• Erase/Program Cycles: Up to 100,000 cycles

Pin Configuration

The detailed pin configuration of S29GL128P11TFI013 can vary depending on the specific package and manufacturer. However, it generally includes the following pins:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A23: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RP#/BYTE#: Reset/byte enable control
9. RY/BY#: Ready/busy status output
10. WP#/ACC: Write protect or accelerated programming control

Please refer to the datasheet provided by the manufacturer for the exact pin configuration of S29GL128P11TFI013.

Functional Features

• High-speed read and write operations
• Block erase and sector erase capabilities
• Advanced wear-leveling algorithms for enhanced endurance
• Error correction codes (ECC) for data integrity
• Power-saving features for efficient operation
• Security features such as password protection and secure erase options

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast access times
• Reliable and durable
• Compact form factor
• Versatile interface options

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited number of erase/program cycles
• Susceptible to data loss in case of power failure during write operations

Working Principles

S29GL128P11TFI013 is based on NAND flash memory technology. It stores data by trapping electric charges in a floating gate structure within each memory cell. The presence or absence of charges determines the stored data value (0 or 1). To write data, high voltage is applied to the control gates, allowing electrons to tunnel into the floating gate. Erasing data involves removing the trapped charges from the floating gate using an electrical charge.

Application Field Plans

S29GL128P11TFI013 finds applications in various electronic devices that require non-volatile data storage. Some potential application fields include: - Smartphones and tablets - Digital cameras and camcorders - Solid-state drives (SSDs) - Automotive electronics - Industrial control systems - Medical devices

Alternative Models

There are several alternative models available in the market that offer similar functionality to S29GL128P11TFI013. Some popular alternatives include: - S34ML01G1: Manufactured by Cypress Semiconductor - MT29F2G08ABAEAWP: Manufactured by Micron Technology - W25N01GVZEIG: Manufactured by Winbond Electronics

These alternative models may have slightly different specifications and pin configurations, so it is important to consult their respective datasheets for detailed information.

In conclusion, S29GL128P11TFI013 is a flash memory device with a high storage capacity, fast access times, and reliable performance. It is widely used in various electronic devices and offers several advantages along with some limitations. Its working principle is based on NAND flash memory technology. Alternative models from different manufacturers provide similar functionality.