S29GL128P10TFI0205

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
• Package: TFBGA (Thin Fine-Pitch Ball Grid Array)
• Essence: Reliable and high-performance flash memory solution
• Packaging/Quantity: Individually packaged, quantity varies based on customer requirements

Specifications

• Memory Capacity: 128 Megabits (16 Megabytes)
• Organization: 16-bit wide data bus
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Erase Time: 2 ms (typical)
• Operating Temperature Range: -40°C to +85°C
• Endurance: 100,000 program/erase cycles
• Data Retention: 20 years

Detailed Pin Configuration

The S29GL128P10TFI0205 has a total of 48 pins. The pin configuration is as follows:

1. VCCQ - Power supply for I/O buffers
2. DQ0-DQ15 - Data input/output pins
3. A0-A18 - Address input pins
4. CE# - Chip enable input
5. WE# - Write enable input
6. OE# - Output enable input
7. RP# - Reset/Power-down input
8. RY/BY# - Ready/Busy output
9. WP#/ACC - Write protect input/Acceleration input
10. VSSQ - Ground for I/O buffers

Functional Features

• High-speed programming and erasing operations
• Advanced sector architecture for flexible data management
• Hardware reset and power-down features
• Automatic program and erase suspension/resume
• Software and hardware data protection mechanisms
• Efficient block erase and sector erase operations

Advantages

• Fast read and write operations enhance overall system performance
• Large storage capacity allows for extensive data storage
• Reliable and durable flash memory technology
• Flexible data management through advanced sector architecture
• Power-down and reset features improve power efficiency and system reliability

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Relatively higher cost per unit compared to traditional storage solutions
• Susceptible to data corruption in case of power failure during programming or erasing operations

Working Principles

The S29GL128P10TFI0205 utilizes a floating gate transistor structure to store data. It employs a combination of electrical charges to represent binary information. During programming, an electric charge is trapped in the floating gate, altering the transistor's behavior and storing data. Erasing involves removing the trapped charge from the floating gate, resetting the transistor to its initial state.

Detailed Application Field Plans

The S29GL128P10TFI0205 is widely used in various electronic devices that require reliable and high-performance flash memory. Some common application fields include: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., infotainment systems, navigation units) - Industrial equipment (e.g., control systems, data loggers) - Networking devices (e.g., routers, switches)

Detailed and Complete Alternative Models

1. S29GL064P10TFI0205 - 64 Megabit (8 Megabyte) capacity variant
2. S29GL256P10TFI0205 - 256 Megabit (32 Megabyte) capacity variant
3. S29GL512P10TFI0205 - 512 Megabit (64 Megabyte) capacity variant
4. S29GL01GP10TFI0205 - 1 Gigabit (128 Megabyte) capacity variant

These alternative models offer different storage capacities to cater to diverse application requirements.

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