S29GL128P10FFIS12

Product Overview

Category

S29GL128P10FFIS12 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High capacity: Offers a storage capacity of 128 gigabits (16 gigabytes).
• Fast read/write speeds: Enables quick access to stored data.
• Reliable: Provides high endurance and data retention capabilities.
• Low power consumption: Optimized for energy efficiency.

Package

The S29GL128P10FFIS12 flash memory device comes in a compact package that ensures easy integration into electronic systems. It is typically available in surface mount technology (SMT) packages.

Essence

The essence of S29GL128P10FFIS12 lies in its ability to provide reliable and high-capacity data storage for a wide range of electronic devices.

Packaging/Quantity

The device is usually packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in bulk quantities suitable for large-scale production.

Specifications

• Memory Type: Flash
• Capacity: 128 gigabits (16 gigabytes)
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Access Time: 100 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: Surface Mount Technology (SMT)

Detailed Pin Configuration

The S29GL128P10FFIS12 flash memory device has a specific pin configuration that facilitates its integration into electronic systems. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. A0-A23: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RY/BY#: Ready/busy status output
8. RP#/BYTE#: Reset/byte# control
9. WP#/ACC: Write protect/acceleration control
10. VSS: Ground

Functional Features

• High-speed data transfer: The S29GL128P10FFIS12 flash memory device offers fast read and write speeds, allowing for efficient data transfer.
• Reliable data storage: It provides high endurance and data retention capabilities, ensuring the integrity of stored data over an extended period.
• Easy integration: The device's compact package and standardized pin configuration make it easy to integrate into various electronic systems.
• Low power consumption: Designed with energy efficiency in mind, the flash memory device minimizes power consumption, extending battery life in portable devices.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read/write speeds
• High reliability
• Low power consumption
• Easy integration into electronic systems

Disadvantages

• Limited compatibility with certain older devices that do not support parallel interfaces
• Relatively higher cost compared to lower-capacity flash memory options

Working Principles

The S29GL128P10FFIS12 flash memory device operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, each capable of storing multiple bits of data. These cells are organized into pages, blocks, and planes, allowing for efficient data storage and retrieval.

When data is written to the device, it is stored by applying electrical charges to specific memory cells. Reading data involves detecting the presence or absence of charges within the cells. The device's controller manages these operations, ensuring accurate and reliable data storage.

Detailed Application Field Plans

The S29GL128P10FFIS12 flash memory device finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Its high capacity, fast read/write speeds, and reliability make it suitable for demanding applications that require efficient data storage and retrieval.

Detailed and Complete Alternative Models

• S29GL064P10TFI010: 64 gigabit (8 gigabyte) parallel flash memory device.
• S29GL256P10TFI020: 256 gigabit (32 gigabyte) parallel flash memory device.
• S29GL512P10TFI030: 512 gigabit (64 gigabyte) parallel flash memory device.

These alternative models offer different storage capacities while maintaining similar characteristics and functionality to the S29GL128P10FFIS12. The choice of model depends on the specific requirements of the application.

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