S29GL064S80DHIV20

Product Overview

Category

The S29GL064S80DHIV20 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: The S29GL064S80DHIV20 offers a storage capacity of 64 gigabits (8 gigabytes), allowing for ample space to store large amounts of data.
• High-speed data transfer: With a maximum operating frequency of 80 MHz, this flash memory device enables fast read and write operations.
• Reliable performance: The S29GL064S80DHIV20 incorporates advanced error correction techniques and wear-leveling algorithms, ensuring data integrity and prolonging the lifespan of the device.
• Low power consumption: This flash memory device is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The S29GL064S80DHIV20 is available in a small form factor package, facilitating its integration into space-constrained electronic devices.

Packaging/Quantity

The S29GL064S80DHIV20 is typically packaged in a surface-mount package, such as a ball grid array (BGA) or quad flat no-leads (QFN). The exact packaging and quantity may vary depending on the manufacturer and customer requirements.

Specifications

• Storage Capacity: 64 gigabits (8 gigabytes)
• Operating Frequency: Up to 80 MHz
• Supply Voltage: 2.7V - 3.6V
• Interface: Parallel or Serial
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years

Detailed Pin Configuration

The S29GL064S80DHIV20 features a specific pin configuration that enables its proper functioning within a system. The pinout diagram and description are as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A22: Address inputs for selecting memory locations
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control signal
6. CE#: Chip enable control signal
7. OE#: Output enable control signal
8. RP#/BYTE#: Reset/byte enable control signal
9. RY/BY#: Ready/busy status output
10. WP#/ACC: Write protect or accelerated programming control signal
11. RESET#: External reset control signal

Functional Features

• Block Erase: The S29GL064S80DHIV20 supports block erase operations, allowing for efficient erasure of large memory regions.
• Page Program: This flash memory device enables page-level programming, enabling fast and flexible data storage.
• Read Modes: The S29GL064S80DHIV20 offers multiple read modes, including random access and continuous burst read, providing versatility in accessing stored data.
• Security Features: This product incorporates various security features, such as password protection and lock bits, to safeguard sensitive information.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer speeds enhance overall system performance.
• Reliable performance ensures data integrity and longevity.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into space-constrained designs.

Disadvantages

• Higher cost compared to lower-capacity flash memory options.
• Limited compatibility with older systems that do not support high-density flash memory.

Working Principles

The S29GL064S80DHIV20 utilizes NAND flash memory technology to store and retrieve data. It employs a combination of floating-gate transistors and charge storage mechanisms to represent binary data. The device operates by applying appropriate voltage levels to the control pins, enabling read, write, erase, and other operations.

Detailed Application Field Plans

The S29GL064S80DHIV20 finds applications in a wide range of electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Embedded systems - Automotive electronics

Detailed and Complete Alternative Models

1. S29GL032S70FHIV20: 32 gigabit flash memory with similar characteristics and features.
2. S29GL128S90FHIV20: 128 gigabit flash memory with higher storage capacity.
3. S29GL256S100FHIV20: 256 gigabit flash memory with even higher storage capacity.

These alternative models offer varying storage capacities to cater to different application requirements while maintaining similar performance characteristics.

Note: The above information is based on general specifications and may vary depending on the manufacturer and specific product version.