S29GL064N90TAI040

Product Overview

Category

S29GL064N90TAI040 belongs to the category of Flash Memory.

Use

It is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High storage capacity: Offers 64 gigabits (8 gigabytes) of storage space.
• Fast read and write speeds: Enables quick access to stored data.
• Reliable performance: Built with advanced technology to ensure data integrity and longevity.
• Low power consumption: Optimized for energy efficiency.

Package

S29GL064N90TAI040 is available in a compact package that facilitates easy integration into electronic devices. The specific package type may vary depending on the manufacturer.

Essence

The essence of S29GL064N90TAI040 lies in its ability to provide high-capacity, reliable, and fast data storage for electronic devices.

Packaging/Quantity

The product is typically sold in reels or trays, containing multiple units per package. The exact quantity may vary based on the manufacturer's specifications.

Specifications

• Manufacturer: [Example Manufacturer]
• Part Number: S29GL064N90TAI040
• Memory Type: NAND Flash
• Memory Capacity: 64 gigabits (8 gigabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: [Specific package type]

Detailed Pin Configuration

The pin configuration of S29GL064N90TAI040 is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. DQ0-DQ15: Data inputs/outputs
5. WE#: Write enable
6. CE#: Chip enable
7. OE#: Output enable
8. RY/BY#: Ready/busy status
9. WP#/ACC: Write protect or accelerated programming control
10. RESET#: Reset

Note: The pin configuration may vary slightly depending on the manufacturer.

Functional Features

• High-speed data transfer: S29GL064N90TAI040 offers fast read and write speeds, allowing for efficient data access.
• Error correction: Built-in error correction mechanisms ensure data integrity during storage and retrieval.
• Block erase capability: Enables selective erasure of specific memory blocks, enhancing flexibility in data management.
• Low power consumption: Designed to minimize energy usage, making it suitable for battery-powered devices.
• Extended temperature range: Can operate reliably in extreme temperature conditions.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read and write speeds
• Reliable performance
• Low power consumption
• Flexible block erase capability

Disadvantages

• Higher cost compared to lower-capacity flash memory options
• Limited endurance (number of program/erase cycles) compared to other types of non-volatile memory

Working Principles

S29GL064N90TAI040 utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate within each memory cell. When a voltage is applied, the trapped electrons are either removed or retained, representing binary values (0 or 1). This allows for non-volatile storage of digital information.

Detailed Application Field Plans

S29GL064N90TAI040 finds applications in various electronic devices that require high-capacity data storage, including: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. S29GL064N90TFI040: Similar to S29GL064N90TAI040, but with a different package type.
2. S29GL064N90FFI040: Offers the same specifications as S29GL064N90TAI040, but with an extended temperature range.

Note: The availability of alternative models may vary depending on the manufacturer.

In conclusion, S29GL064N90TAI040 is a high-capacity flash memory device that provides reliable and fast data storage for a wide range of electronic devices. Its advanced features and characteristics make it suitable for various applications in consumer electronics, industrial systems, and automotive electronics.