S29GL064N90DFVR23

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
  • Low power consumption
• Package: VFBGA (Very Fine Pitch Ball Grid Array)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Available in reels, quantity varies based on customer requirements

Specifications

• Manufacturer: Cypress Semiconductor
• Memory Type: NOR Flash
• Density: 64 Megabits (8 Megabytes)
• Voltage Range: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 90 ns
• Organization: 8-bit
• Erase/Program Suspend/Erase Suspend: Yes
• Burst Mode: Yes
• Security Features: Hardware protection mechanisms
• RoHS Compliant: Yes

Detailed Pin Configuration

The S29GL064N90DFVR23 has a total of 48 pins. The pin configuration is as follows:

1. A0-A18: Address Inputs
2. DQ0-DQ7: Data Inputs/Outputs
3. WE#: Write Enable Input
4. CE#: Chip Enable Input
5. OE#: Output Enable Input
6. RP#/BYTE#: Reset/Byte# Input
7. RY/BY#: Ready/Busy Output
8. VCC: Power Supply
9. VSS: Ground

Functional Features

• High-speed read and write operations
• Sector erase capability for flexible data management
• Built-in algorithms for reliable programming and erasing
• Automatic program and erase voltage generation
• Hardware protection mechanisms for data security
• Low power consumption in standby mode
• Burst mode for faster data transfer

Advantages and Disadvantages

Advantages: - High-speed operations enable quick data access - Large storage capacity accommodates extensive data requirements - Low power consumption prolongs battery life in portable devices - Sector erase capability allows efficient data management - Hardware protection mechanisms enhance data security

Disadvantages: - Limited compatibility with certain device interfaces - Relatively higher cost compared to other memory options - Susceptible to physical damage due to its small package size

Working Principles

The S29GL064N90DFVR23 is based on NOR Flash technology. It stores data using a grid of memory cells, where each cell can hold one bit of information. The memory cells are organized into sectors, which can be individually erased or programmed. When data needs to be read, the appropriate address is provided, and the corresponding memory cell is accessed. During programming or erasing, specific voltages are applied to modify the state of the memory cells.

Detailed Application Field Plans

The S29GL064N90DFVR23 is widely used in various electronic devices that require reliable and high-speed data storage. Some common application fields include:

1. Embedded Systems: Used as a boot memory or for firmware storage in microcontrollers and IoT devices.
2. Automotive Electronics: Utilized for storing critical data such as engine parameters, diagnostics, and firmware updates.
3. Consumer Electronics: Integrated into smartphones, tablets, digital cameras, and gaming consoles for data storage and retrieval.
4. Industrial Control Systems: Employed in PLCs (Programmable Logic Controllers) and automation equipment for program storage and data logging.
5. Networking Equipment: Used in routers, switches, and network appliances for firmware storage and configuration data.

Detailed and Complete Alternative Models

1. S29GL032N90TFI040: 32 Megabit NOR Flash Memory, 90 ns access time, TSOP package.
2. S29GL128N10TFI010: 128 Megabit NOR Flash Memory, 10 ns access time, TSOP package.
3. S29GL256P11FFIV20: 256 Megabit NOR Flash Memory, 110 ns access time, FBGA package.
4. S29GL512P11FFIV20: 512 Megabit NOR Flash Memory, 110 ns access time, FBGA package.

These alternative models offer different memory capacities, access times, and package options to suit various application requirements.

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