S29GL064N11FFIV13

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Integrated circuit (IC) chip
• Essence: Non-volatile memory for long-term data storage
• Packaging/Quantity: Typically sold in reels or trays containing multiple chips

Specifications

• Model: S29GL064N11FFIV13
• Memory Capacity: 64 gigabits (8 gigabytes)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Interface: Parallel
• Access Time: 110 ns
• Organization: 8M x 8 bits
• Page Size: 256 bytes
• Erase/Program Cycles: 100,000 minimum

Detailed Pin Configuration

The S29GL064N11FFIV13 flash memory chip has the following pin configuration:

1. VCC: Power supply voltage
2. A0-A22: Address inputs
3. DQ0-DQ7: Data inputs/outputs
4. WE#: Write enable control input
5. CE#: Chip enable control input
6. OE#: Output enable control input
7. RP#/BYTE#: Reset/byte enable control input
8. RY/BY#: Ready/busy output
9. WP#/ACC: Write protect/control input
10. VSS: Ground

Functional Features

• High-speed data transfer with fast access times
• Reliable and durable non-volatile memory
• Low power consumption
• Easy integration into various electronic devices
• Efficient erase and program operations
• Error correction capabilities for enhanced data integrity

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read/write speeds - Non-volatile memory retains data even without power - Suitable for a wide range of electronic devices - High endurance with 100,000 erase/program cycles

Disadvantages: - Relatively high cost compared to other memory options - Limited compatibility with certain interfaces - Requires careful handling to prevent damage

Working Principles

The S29GL064N11FFIV13 flash memory operates based on the principles of floating-gate transistors. It uses electrically erasable programmable read-only memory (EEPROM) technology to store data. The memory cells consist of floating-gate MOSFETs that can trap or release electrons, representing binary states.

During programming, a high voltage is applied to the control gate, allowing electrons to tunnel through the insulating layer onto the floating gate. This process traps charge, altering the threshold voltage of the transistor and storing data. Erasing is achieved by applying a higher voltage that removes the trapped charge from the floating gate.

Detailed Application Field Plans

The S29GL064N11FFIV13 flash memory chip finds applications in various fields, including:

1. Consumer Electronics: Used in smartphones, tablets, digital cameras, and portable media players for data storage.
2. Automotive: Integrated into automotive infotainment systems, navigation units, and engine control modules for reliable data storage.
3. Industrial Automation: Utilized in industrial control systems, robotics, and machinery for storing critical program codes and data.
4. Networking Equipment: Incorporated into routers, switches, and network storage devices for fast and reliable data transfer.
5. Medical Devices: Employed in medical equipment such as ultrasound machines, patient monitors, and diagnostic devices for data storage.

Detailed and Complete Alternative Models

1. S29GL128N10TFI010: 128 gigabit (16 gigabyte) flash memory chip with similar specifications.
2. S29GL032N90FFIS20: 32 gigabit (4 gigabyte) flash memory chip with lower power consumption.
3. S29GL256P11FFIV20: 256 gigabit (32 gigabyte) flash memory chip with higher storage capacity.

These alternative models offer different capacities and features to cater to diverse application requirements.

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