Cypress Semiconductor Corp
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S29GL064N11FFIS43
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S29GL064N11FFIS43

Product Overview

  • Category: Flash Memory
  • Use: Data storage and retrieval in electronic devices
  • Characteristics: High capacity, non-volatile, fast read/write speeds
  • Package: Integrated Circuit (IC)
  • Essence: Non-volatile memory for long-term data storage
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Memory Capacity: 64 Megabits (8 Megabytes)
  • Organization: 8-bit parallel interface
  • Operating Voltage: 2.7V - 3.6V
  • Access Time: 110 ns
  • Interface Type: Asynchronous
  • Operating Temperature: -40°C to +85°C
  • Data Retention: Minimum 20 years

Detailed Pin Configuration

The S29GL064N11FFIS43 flash memory IC has the following pin configuration:

  1. VCC: Power supply voltage
  2. GND: Ground reference
  3. A0-A18: Address inputs
  4. DQ0-DQ7: Data inputs/outputs
  5. WE#: Write enable control input
  6. CE#: Chip enable control input
  7. OE#: Output enable control input
  8. RP#/BYTE#: Reset/byte select control input
  9. RY/BY#: Ready/busy status output
  10. WP#/ACC: Write protect or accelerated programming control input
  11. NC: No connection
  12. VPP: Programming voltage supply

Functional Features

  • High-speed read and write operations
  • Sector erase and chip erase functions
  • Automatic program and erase algorithms
  • Hardware and software protection features
  • Low power consumption
  • Reliable data retention

Advantages and Disadvantages

Advantages: - High capacity for data storage - Fast read and write speeds - Long data retention period - Low power consumption

Disadvantages: - Limited endurance (number of erase/write cycles) - Relatively high cost compared to other memory technologies

Working Principles

The S29GL064N11FFIS43 flash memory operates based on the principles of floating gate transistors. It uses a combination of electrical charges trapped in the floating gate to store binary data. The presence or absence of charge determines the logic state of each memory cell, allowing for non-volatile data storage.

Detailed Application Field Plans

The S29GL064N11FFIS43 flash memory is widely used in various electronic devices, including:

  1. Mobile phones and smartphones
  2. Digital cameras
  3. Portable media players
  4. Solid-state drives (SSDs)
  5. Automotive electronics
  6. Industrial control systems

Its high capacity, fast access times, and reliable data retention make it suitable for applications that require large amounts of non-volatile storage.

Detailed and Complete Alternative Models

  1. S29GL032N11FFIS42: 32 Megabit (4 Megabyte) flash memory with similar specifications
  2. S29GL128N10TFI010: 128 Megabit (16 Megabyte) flash memory with higher capacity
  3. S29GL256N11TFI020: 256 Megabit (32 Megabyte) flash memory with even higher capacity

These alternative models offer different capacities and may have slight variations in specifications, allowing customers to choose the most suitable option for their specific requirements.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací S29GL064N11FFIS43 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of S29GL064N11FFIS43 in technical solutions:

  1. Q: What is the S29GL064N11FFIS43? A: The S29GL064N11FFIS43 is a flash memory device manufactured by Cypress Semiconductor. It has a capacity of 64 megabits (8 megabytes) and operates at a voltage of 3.3V.

  2. Q: What are the typical applications of S29GL064N11FFIS43? A: The S29GL064N11FFIS43 is commonly used in various embedded systems, such as automotive electronics, industrial control systems, networking equipment, and consumer electronics.

  3. Q: What is the interface of S29GL064N11FFIS43? A: The S29GL064N11FFIS43 uses a parallel interface with an 8-bit or 16-bit data bus, making it compatible with a wide range of microcontrollers and processors.

  4. Q: What is the operating temperature range of S29GL064N11FFIS43? A: The S29GL064N11FFIS43 can operate within a temperature range of -40°C to +85°C, making it suitable for both commercial and industrial applications.

  5. Q: Does S29GL064N11FFIS43 support hardware and software write protection? A: Yes, the S29GL064N11FFIS43 supports both hardware and software write protection mechanisms to prevent accidental modification of stored data.

  6. Q: What is the erase and program cycle endurance of S29GL064N11FFIS43? A: The S29GL064N11FFIS43 has a minimum endurance of 100,000 erase/program cycles, ensuring reliable and long-lasting data storage.

  7. Q: Can S29GL064N11FFIS43 operate at different clock frequencies? A: Yes, the S29GL064N11FFIS43 supports various clock frequencies, allowing flexibility in system design and optimization for different performance requirements.

  8. Q: Does S29GL064N11FFIS43 have any built-in error correction mechanisms? A: No, the S29GL064N11FFIS43 does not have built-in error correction mechanisms. However, it can be used in conjunction with external error correction techniques if required.

  9. Q: What is the power supply voltage range for S29GL064N11FFIS43? A: The S29GL064N11FFIS43 operates within a voltage range of 2.7V to 3.6V, making it compatible with standard power supply voltages used in most electronic systems.

  10. Q: Is S29GL064N11FFIS43 RoHS compliant? A: Yes, the S29GL064N11FFIS43 is RoHS (Restriction of Hazardous Substances) compliant, ensuring that it meets environmental regulations regarding the use of hazardous materials.

Please note that these answers are general and may vary depending on specific implementation details and requirements.