Cypress Semiconductor Corp
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S29GL064N11FFIS32
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S29GL064N11FFIS32

Product Overview

  • Category: Flash Memory
  • Use: Data storage and retrieval in electronic devices
  • Characteristics: High capacity, fast read/write speeds, non-volatile memory
  • Package: Integrated Circuit (IC)
  • Essence: Non-volatile memory for storing data in electronic devices
  • Packaging/Quantity: Available in various packaging options, typically sold in bulk quantities

Specifications

  • Model: S29GL064N11FFIS32
  • Capacity: 64 gigabits (8 gigabytes)
  • Interface: Parallel
  • Voltage: 3.0 - 3.6 volts
  • Access Time: 110 nanoseconds
  • Operating Temperature: -40°C to +85°C
  • Data Retention: Up to 20 years
  • Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The S29GL064N11FFIS32 flash memory IC has a total of 48 pins. The pin configuration is as follows:

  1. VCCQ: Power supply voltage for I/O buffers
  2. DQ0-DQ15: Data input/output pins
  3. A0-A18: Address input pins
  4. CE#: Chip Enable
  5. OE#: Output Enable
  6. WE#: Write Enable
  7. RP#/BYTE#: Reset/Byte#
  8. RY/BY#: Ready/Busy#
  9. WP#/ACC: Write Protect/Acceleration
  10. VSSQ: Ground for I/O buffers
  11. VCC: Power supply voltage
  12. VSS: Ground

(Continues with the remaining pin descriptions)

Functional Features

  • High-speed data transfer with fast access times
  • Reliable and durable non-volatile memory
  • Low power consumption
  • Easy integration into various electronic devices
  • Support for multiple read and write operations
  • Built-in error correction mechanisms

Advantages

  • Large storage capacity
  • Fast read/write speeds
  • Long data retention period
  • Wide operating temperature range
  • High endurance for program/erase cycles
  • Compatibility with various electronic devices

Disadvantages

  • Relatively higher cost compared to other memory options
  • Limited compatibility with certain older devices
  • Requires careful handling to prevent damage

Working Principles

The S29GL064N11FFIS32 flash memory utilizes a floating-gate transistor technology. It stores data by trapping electric charges in the floating gate, which can be later retrieved by applying appropriate voltages. The memory cells are organized in a grid-like structure, allowing efficient storage and retrieval of data.

Detailed Application Field Plans

The S29GL064N11FFIS32 flash memory is widely used in various electronic devices, including:

  1. Solid-state drives (SSDs)
  2. Digital cameras
  3. Mobile phones
  4. Tablets
  5. Gaming consoles
  6. Embedded systems
  7. Automotive electronics
  8. Industrial control systems

Alternative Models

  1. S29GL032N11FAIV20

    • Capacity: 32 gigabits (4 gigabytes)
    • Interface: Parallel
    • Voltage: 2.7 - 3.6 volts
    • Access Time: 110 nanoseconds

  2. S29GL128N10TFI020

    • Capacity: 128 gigabits (16 gigabytes)
    • Interface: Parallel
    • Voltage: 2.7 - 3.6 volts
    • Access Time: 100 nanoseconds

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací S29GL064N11FFIS32 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of S29GL064N11FFIS32 in technical solutions:

  1. Q: What is the S29GL064N11FFIS32? A: The S29GL064N11FFIS32 is a 64-megabit (8 megabyte) flash memory device manufactured by Cypress Semiconductor.

  2. Q: What are the key features of S29GL064N11FFIS32? A: Some key features include a high-speed interface, low power consumption, sector erase capability, and a wide operating voltage range.

  3. Q: What applications can the S29GL064N11FFIS32 be used for? A: It can be used in various applications such as automotive systems, industrial control, consumer electronics, and networking equipment.

  4. Q: How fast is the S29GL064N11FFIS32? A: It has a fast access time with read speeds up to 90 ns and program/erase times typically under 2 seconds.

  5. Q: What is the operating voltage range of the S29GL064N11FFIS32? A: The device operates within a voltage range of 2.7V to 3.6V.

  6. Q: Can the S29GL064N11FFIS32 be easily integrated into existing designs? A: Yes, it is designed to be compatible with standard microcontroller interfaces and can be easily integrated into existing designs.

  7. Q: Does the S29GL064N11FFIS32 support sector erase operations? A: Yes, it supports sector erase operations, allowing specific sectors of the memory to be erased without affecting others.

  8. Q: Is the S29GL064N11FFIS32 resistant to data loss during power interruptions? A: Yes, it has built-in features like program/erase suspend and resume functions to ensure data integrity during power interruptions.

  9. Q: Can the S29GL064N11FFIS32 be used in harsh environments? A: Yes, it is designed to operate reliably in a wide temperature range and can withstand high levels of shock and vibration.

  10. Q: What is the lifespan of the S29GL064N11FFIS32? A: The device has a typical endurance of 100,000 program/erase cycles, ensuring long-term reliability in various applications.

Please note that these answers are general and may vary depending on specific implementation details and requirements.