Cypress Semiconductor Corp
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S29GL032N90TFVR23

S29GL032N90TFVR23

Product Overview

  • Category: Flash Memory
  • Use: Data storage and retrieval in electronic devices
  • Characteristics: High capacity, fast read/write speeds, non-volatile memory
  • Package: 48-ball VFBGA package
  • Essence: Non-volatile memory solution for various electronic applications
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Memory Capacity: 32 Megabits (4 Megabytes)
  • Operating Voltage: 2.7V - 3.6V
  • Interface: Parallel NOR Flash
  • Access Time: 90 nanoseconds
  • Operating Temperature: -40°C to +85°C
  • Endurance: 100,000 program/erase cycles
  • Data Retention: 20 years

Detailed Pin Configuration

The S29GL032N90TFVR23 has a 48-ball VFBGA package with the following pin configuration:

  1. A0
  2. A1
  3. A2
  4. A3
  5. A4
  6. A5
  7. A6
  8. A7
  9. A8
  10. A9
  11. A10
  12. A11
  13. A12
  14. A13
  15. A14
  16. A15
  17. A16
  18. A17
  19. A18
  20. A19
  21. A20
  22. A21
  23. A22
  24. A23
  25. A24
  26. A25
  27. A26
  28. A27
  29. A28
  30. A29
  31. A30
  32. A31
  33. DQ0
  34. DQ1
  35. DQ2
  36. DQ3
  37. DQ4
  38. DQ5
  39. DQ6
  40. DQ7
  41. VCC
  42. GND
  43. WE#
  44. CE#
  45. OE#
  46. RP#
  47. RY/BY#
  48. NC

Functional Features

  • High-speed read and write operations
  • Sector erase capability for efficient data management
  • Built-in hardware and software protection mechanisms
  • Low power consumption
  • Easy integration into existing systems

Advantages and Disadvantages

Advantages: - High capacity allows for storage of large amounts of data - Fast read/write speeds enable quick data access - Non-volatile memory retains data even when power is disconnected - Sector erase capability enhances data management flexibility

Disadvantages: - Limited endurance with a maximum of 100,000 program/erase cycles - Relatively high operating voltage range compared to some other flash memory options

Working Principles

The S29GL032N90TFVR23 operates based on the principles of NOR flash memory technology. It uses a parallel interface to communicate with the host device and stores data in non-volatile memory cells. The memory cells are organized into sectors, allowing for efficient erasure and programming of specific sections of data.

Detailed Application Field Plans

The S29GL032N90TFVR23 can be used in various electronic devices and applications, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Networking equipment

Detailed and Complete Alternative Models

  • S29GL032N90TFI030: Same specifications, different package (TSOP)
  • S29GL032N90TFI040: Same specifications, different package (TSOP)
  • S29GL032N90TFI040B: Same specifications, different package (TSOP)
  • S29GL032N90TFI040C: Same specifications, different package (TSOP)
  • S29GL032N90TFI040E: Same specifications, different package (TSOP)

These alternative models offer the same functionality and specifications as the S29GL032N90TFVR23 but come in different package options to suit specific design requirements.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací S29GL032N90TFVR23 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of S29GL032N90TFVR23 in technical solutions:

  1. Q: What is the S29GL032N90TFVR23? A: The S29GL032N90TFVR23 is a flash memory device manufactured by Cypress Semiconductor. It has a capacity of 32 megabits (4 megabytes) and operates at a voltage of 3.0 to 3.6 volts.

  2. Q: What are the typical applications of S29GL032N90TFVR23? A: The S29GL032N90TFVR23 is commonly used in various technical solutions such as embedded systems, consumer electronics, automotive applications, industrial control systems, and networking equipment.

  3. Q: What is the interface of S29GL032N90TFVR23? A: The S29GL032N90TFVR23 uses a parallel interface with a 16-bit data bus and supports both synchronous and asynchronous operations.

  4. Q: What is the maximum operating frequency of S29GL032N90TFVR23? A: The S29GL032N90TFVR23 can operate at a maximum frequency of 90 MHz, allowing for fast data transfer rates.

  5. Q: Does S29GL032N90TFVR23 support hardware or software write protection? A: Yes, the S29GL032N90TFVR23 supports both hardware and software write protection mechanisms to prevent accidental modification of data.

  6. Q: Can S29GL032N90TFVR23 be used for code storage in microcontrollers? A: Absolutely! The S29GL032N90TFVR23 is commonly used for storing program code in microcontrollers due to its high capacity and fast access times.

  7. Q: What is the endurance of S29GL032N90TFVR23? A: The S29GL032N90TFVR23 has a typical endurance of 100,000 program/erase cycles, making it suitable for applications that require frequent data updates.

  8. Q: Does S29GL032N90TFVR23 support sector erase operations? A: Yes, the S29GL032N90TFVR23 supports sector erase operations, allowing specific blocks of memory to be erased instead of the entire chip.

  9. Q: Can S29GL032N90TFVR23 operate in harsh environments? A: Yes, the S29GL032N90TFVR23 is designed to operate reliably in a wide temperature range (-40°C to +85°C) and can withstand high levels of shock and vibration.

  10. Q: Is S29GL032N90TFVR23 compatible with other flash memory devices? A: Yes, the S29GL032N90TFVR23 is compatible with other flash memory devices that use a similar parallel interface, allowing for easy integration into existing systems.

Please note that these answers are general and may vary depending on the specific requirements and implementation of the technical solution.