S29GL032N90FFIS12

Product Overview

Category: Flash Memory

Use: The S29GL032N90FFIS12 is a flash memory device used for storing data in electronic devices. It provides non-volatile storage, meaning the data remains even when power is turned off.

Characteristics: - High capacity: The S29GL032N90FFIS12 has a storage capacity of 32 gigabits (4 gigabytes). - Fast access time: It offers a fast access time of 90 nanoseconds, allowing for quick retrieval of data. - Reliable: This flash memory device is designed to be highly reliable, ensuring data integrity and longevity. - Low power consumption: It operates at low power levels, making it suitable for battery-powered devices. - Wide temperature range: The S29GL032N90FFIS12 can operate in a wide temperature range, from -40°C to +85°C. - RoHS compliant: It meets the Restriction of Hazardous Substances directive, ensuring environmental friendliness.

Package: The S29GL032N90FFIS12 comes in a small form factor package, making it suitable for compact electronic devices.

Essence: The essence of the S29GL032N90FFIS12 is its ability to provide high-capacity, reliable, and fast non-volatile storage for electronic devices.

Packaging/Quantity: The S29GL032N90FFIS12 is typically packaged in tape and reel format, with a quantity of 250 units per reel.

Specifications

• Storage Capacity: 32 gigabits (4 gigabytes)
• Access Time: 90 nanoseconds
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: Small form factor package
• Package Quantity: 250 units per reel

Detailed Pin Configuration

The S29GL032N90FFIS12 has a pin configuration as follows:

1. VCC - Power supply voltage
2. A0-A21 - Address inputs
3. DQ0-DQ15 - Data input/output
4. WE# - Write enable
5. CE# - Chip enable
6. OE# - Output enable
7. RESET# - Reset
8. WP#/ACC - Write protect/acceleration
9. RY/BY# - Ready/busy
10. VSS - Ground

Functional Features

• High-speed data transfer: The S29GL032N90FFIS12 supports high-speed data transfer, allowing for efficient read and write operations.
• Sector erase capability: It provides sector erase capability, enabling selective erasure of specific memory sectors.
• Block locking: This flash memory device supports block locking, which allows certain memory blocks to be protected from accidental erasure or modification.
• Error correction: The S29GL032N90FFIS12 incorporates error correction techniques to ensure data integrity.

Advantages and Disadvantages

Advantages: - High storage capacity - Fast access time - Reliable and durable - Low power consumption - Wide temperature range operation - RoHS compliant

Disadvantages: - Limited endurance: Flash memory devices have a limited number of erase/write cycles before they may become unreliable. - Higher cost compared to other types of memory

Working Principles

The S29GL032N90FFIS12 is based on the NAND flash memory technology. It utilizes floating-gate transistors to store data in a non-volatile manner. When data is written, charges are trapped in the floating gate, representing either a "0" or "1" state. During read operations, the charges are sensed to retrieve the stored data.

Detailed Application Field Plans

The S29GL032N90FFIS12 is widely used in various electronic devices, including: - Solid-state drives (SSDs) - Digital cameras - Set-top boxes - Networking equipment - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. S29GL064N90FFIS12: This flash memory device offers double the storage capacity of the S29GL032N90FFIS12, with 64 gigabits (8 gigabytes).
2. S29GL016N90FFIS12: A lower capacity alternative with 16 gigabits (2 gigabytes) of storage.
3. S29GL128N90FFIS12: A higher capacity option with 128 gigabits (16 gigabytes) of storage.

These alternative models provide options for different storage requirements while maintaining similar characteristics and functionality.

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