S29GL032N11FFIV23

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
• Package: Integrated Circuit (IC)
• Essence: Stores digital information in a compact and durable format
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Manufacturer: Cypress Semiconductor
• Model: S29GL032N11FFIV23
• Memory Type: NOR Flash
• Capacity: 32 Megabits (4 Megabytes)
• Organization: 2,097,152 words x 16 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 90 ns (max)
• Erase/Program Times: 10 ms (typical)

Detailed Pin Configuration

The S29GL032N11FFIV23 has a total of 48 pins. The pin configuration is as follows:

1. VCCQ
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. RE#
45. BYTE#
46. VSSQ
47. VCC
48. VSS

Functional Features

• High-speed read and write operations enable fast data access.
• Non-volatile memory retains stored data even when power is removed.
• Large storage capacity allows for storing a significant amount of data.
• Reliable performance ensures data integrity over extended periods.

Advantages

• Fast access times improve overall system performance.
• Non-volatile nature eliminates the need for constant power supply to retain data.
• Large storage capacity accommodates diverse application requirements.
• Reliable operation ensures data integrity and longevity.

Disadvantages

• Higher cost compared to other types of memory technologies.
• Limited endurance in terms of erase and program cycles.
• Larger physical size compared to some alternative memory solutions.

Working Principles

The S29GL032N11FFIV23 utilizes NOR flash memory technology. It stores digital information by trapping electrons in a floating gate, which alters the threshold voltage of the memory cell. This change in threshold voltage determines whether the cell represents a logical "0" or "1". The memory can be read by applying appropriate voltages to the address pins and observing the resulting data output.

Detailed Application Field Plans

The S29GL032N11FFIV23 is commonly used in various electronic devices that require non-volatile data storage, such as: - Embedded systems - Automotive electronics - Industrial control systems - Consumer electronics - Networking equipment

Detailed and Complete Alternative Models

• S29GL064N11FFIV23: 64 Megabit (8 Megabyte) capacity, similar specifications
• S29GL128N11FFIV23: 128 Megabit (16 Megabyte) capacity, similar specifications
• S29GL256N11FFIV23: 256 Megabit (32 Megabyte) capacity, similar specifications

(Note: This is not an exhaustive list of alternative models. Please refer to the manufacturer's documentation for a complete list.)

This entry provides an overview of the S29GL032N11FFIV23 flash memory, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.