S29GL01GT11FAIV13

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: Non-volatile, high-speed, reliable, and durable
• Package: Integrated circuit (IC) package
• Essence: Stores digital information using floating gate transistors
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Capacity: 1 gigabit (128 megabytes)
• Organization: 512 sectors, each with 64 kilobytes
• Voltage Range: 2.7V to 3.6V
• Operating Temperature: -40°C to +85°C
• Interface: Parallel NOR Flash
• Access Time: 90 nanoseconds (typical)

Detailed Pin Configuration

The S29GL01GT11FAIV13 has a total of 56 pins. Here is a brief overview of the pin functions:

• VCC: Power supply voltage
• GND: Ground reference
• A0-A18: Address inputs
• DQ0-DQ15: Data input/output lines
• CE#: Chip enable
• OE#: Output enable
• WE#: Write enable
• RY/BY#: Ready/busy status output
• RP#/BYTE#: Reset/byte# mode selection
• WP#/ACC: Write protect/acceleration mode
• RESET#: External reset input
• CLE: Command latch enable
• ALE: Address latch enable
• BYTE#(A-1): Byte# mode select inputs
• RE#(A-1): Read enable inputs
• WP#/ACC(A-1): Write protect/acceleration mode inputs

For a complete and detailed pin configuration diagram, please refer to the datasheet.

Functional Features

• High-speed read and write operations
• Sector erase and program operations
• Block erase and program operations
• Chip erase operation
• Hardware data protection features
• Software data protection features
• Low power consumption in standby mode

Advantages and Disadvantages

Advantages: - High storage capacity - Fast access times - Reliable and durable - Non-volatile (retains data even when power is lost) - Suitable for a wide range of electronic devices

Disadvantages: - Limited write endurance (number of erase/write cycles) - Relatively higher cost compared to other memory technologies

Working Principles

The S29GL01GT11FAIV13 utilizes floating gate transistors to store digital information. It employs a combination of electrical charges to represent binary data (0s and 1s). The presence or absence of charge on the floating gate determines the stored value. The device uses various voltage levels and control signals to perform read, write, and erase operations.

Detailed Application Field Plans

The S29GL01GT11FAIV13 is commonly used in the following applications: - Solid-state drives (SSDs) - Embedded systems - Automotive electronics - Industrial control systems - Consumer electronics (e.g., digital cameras, gaming consoles)

Detailed and Complete Alternative Models

• S29GL512T11FAIV10: 512 megabit (64 megabytes) capacity
• S29GL02GT11FAIV20: 2 gigabit (256 megabytes) capacity
• S29GL04GT11FAIV30: 4 gigabit (512 megabytes) capacity
• S29GL08GT11FAIV40: 8 gigabit (1 gigabyte) capacity

These alternative models offer different capacities to suit specific application requirements.

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